Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space

2011 ◽  
Vol 43 (8) ◽  
pp. 1509-1513 ◽  
Author(s):  
H. Sarvari ◽  
R. Ghayour ◽  
E. Dastjerdy
2020 ◽  
Vol 20 (8) ◽  
pp. 4832-4838
Author(s):  
Ji-Hyun Hur

We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green’s function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.


2013 ◽  
Vol 58 (1-2) ◽  
pp. 282-287 ◽  
Author(s):  
Chun-Nan Chen ◽  
Sheng-Hsiung Chang ◽  
Wei-Long Su ◽  
Jen-Yi Jen ◽  
Yiming Li

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