The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green’s Function Method

2020 ◽  
Vol 20 (8) ◽  
pp. 4832-4838
Author(s):  
Ji-Hyun Hur
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Silicon Cmos ◽  
Armchair Graphene Nanoribbon ◽  
Non Equilibrium Green’S Function ◽  
Non Equilibrium

We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green’s function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.

Modeling of Drain Current in Armchair Graphene Nanoribbon Field Effect Transistor Using Transfer Matrix Method

2014 ◽  
Vol 896 ◽  
pp. 367-370 ◽  
Author(s):  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Drain current in an armchair graphene nanoribbon field effect transistor (AGNRFET) has been quantum mechanically modeled. The transfer matrix method (TMM) was employed to obtain the electron transmittance, and the obtained transmittance was then utilized to calculate the drain current by using the Landauer formula. The calculated results showed that the drain current increases with the gate and drain voltages. It was also shown that the threshold voltage for the device is around 0.3 V. In addition, the AGNR width influences the drain current of AGNRFET.

scholarly journals Development of Quantum Simulator for Emerging Nanoelectronics Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Dinh Sy Hien
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Quantum Devices ◽  
Tunneling Diode ◽  
Quantum Device ◽  
Current Voltage ◽  
Effect Transistor

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

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