Analytical modeling to design the vertically aligned Si-nanowire metal-oxide-semiconductor photosensors for direct color sensing with high spectral resolution

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2016.10.039 ◽

2017 ◽

Vol 87 ◽

pp. 44-50 ◽

Cited By ~ 2

Author(s):

Subhrajit Sikdar ◽

Basudev Nag Chowdhury ◽

Ajay Ghosh ◽

Sanatan Chattopadhyay

Keyword(s):

Metal Oxide ◽

Spectral Resolution ◽

Analytical Modeling ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Spectral Resolution ◽

Si Nanowire ◽

Vertically Aligned ◽

Direct Color

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Analytical Modeling of Vertically Oriented Standalone Si-Nanowire Metal-Oxide-Semiconductor Capacitors for Wavelength Selective Near-Infrared Sensing Applications

Springer Proceedings in Physics - Advances in Optical Science and Engineering ◽

10.1007/978-981-10-3908-9_20 ◽

2017 ◽

pp. 173-179

Author(s):

Subhrajit Sikdar ◽

Basudev Nag Chowdhury ◽

Sanatan Chattopadhyay

Keyword(s):

Metal Oxide ◽

Analytical Modeling ◽

Near Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Nanowire ◽

Infrared Sensing ◽

Sensing Applications

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Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

Journal of Applied Physics ◽

10.1063/1.4884855 ◽

2014 ◽

Vol 115 (24) ◽

pp. 244504 ◽

Cited By ~ 3

Author(s):

A. F. Basile ◽

T. Cramer ◽

A. Kyndiah ◽

F. Biscarini ◽

B. Fraboni

Keyword(s):

Metal Oxide ◽

Transport Properties ◽

Analytical Modeling ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor

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All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithography

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2183783 ◽

2006 ◽

Vol 24 (2) ◽

pp. 1026 ◽

Cited By ~ 4

Author(s):

S. K. Islam ◽

C. Durisety ◽

R. Vijayaraghavan ◽

B. J. Blalock ◽

T. Grundman ◽

...

Keyword(s):

Metal Oxide ◽

Carbon Nanofibers ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Control Circuit ◽

Oxide Semiconductor ◽

Maskless Lithography ◽

Dose Control ◽

Vertically Aligned ◽

Vertically Aligned Carbon Nanofibers

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Analytical modeling of tunneling current through SiO[sub 2]–HfO[sub 2] stacks in metal oxide semiconductor structures

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3043539 ◽

2009 ◽

Vol 27 (1) ◽

pp. 338 ◽

Cited By ~ 10

Author(s):

J. Coignus ◽

R. Clerc ◽

C. Leroux ◽

G. Reimbold ◽

G. Ghibaudo ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Modeling ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3187803 ◽

2009 ◽

Vol 106 (3) ◽

pp. 034312 ◽

Cited By ~ 8

Author(s):

Hironori Yoshioka ◽

Naoya Morioka ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

One Dimensional ◽

Si Nanowire

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Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices

2015 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2015.7301971 ◽

2015 ◽

Cited By ~ 1

Author(s):

Chun-Ning Lai ◽

Chien-Yang Chen ◽

Yiming Li

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Nanowire ◽

Characteristic Fluctuation

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Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l30 ◽

1999 ◽

Vol 38 (Part 2, No. 1A/B) ◽

pp. L30-L32 ◽

Cited By ~ 4

Author(s):

Khairurrijal ◽

Seiichi Miyazaki ◽

Shin-ichi Takagi ◽

Masataka Hirose

Keyword(s):

Metal Oxide ◽

Analytical Modeling ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2031 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2031-2035 ◽

Cited By ~ 1

Author(s):

Kyung Rok Kim ◽

Ki-Whan Song ◽

Dae Hwan Kim ◽

Gwanghyeon Baek ◽

Hyun Ho Kim ◽

...

Keyword(s):

Distribution Function ◽

Metal Oxide ◽

Coulomb Blockade ◽

Analytical Modeling ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Unique Distribution ◽

Electron Transistors ◽

Metal Oxide Semiconductor Structure

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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Cited By ~ 1

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Strained Si

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