Measurement of relaxation of electrical charge distribution on fused silica sample

2007 ◽  
Vol 366 (1-2) ◽  
pp. 145-149 ◽  
Author(s):  
L.G. Prokhorov ◽  
P.E. Khramchenkov ◽  
V.P. Mitrofanov
Polymer ◽  
2001 ◽  
Vol 42 (11) ◽  
pp. 4845-4851 ◽  
Author(s):  
A. Galembeck ◽  
C.A.R. Costa ◽  
M.C.V.M. da Silva ◽  
E.F. Souza ◽  
F. Galembeck

2013 ◽  
Vol 319 ◽  
pp. 23-28
Author(s):  
Yi Tao Ren ◽  
Zhen Quan Dai ◽  
Jian Wang ◽  
Jin Yan Duan

Formation of depletion region and the charge distribution are analyzed using multi-charges’ migration under a polling field in fused silica. The internal fields induced are calculated based on a junction model. The field distributions and their intensities within the whole depletion inside the silica are calculated. The maximum field is on the order of 109 V/m in a abrupt junction, and the optical nonlinearities generated by this internal field are consistent with the experimental results published, which proves the junction model is reasonable and feasible to calculate optical nonlinearity in air by thermal polling.


2015 ◽  
Vol 1120-1121 ◽  
pp. 378-382 ◽  
Author(s):  
Qi Long Wei ◽  
Xiao Bin Yue ◽  
Xiao Yuan Li ◽  
Bo Liu ◽  
Xiao Feng Zhang ◽  
...  

Nano-indentation technology was brought to study microscopic mechanical properties of a single-crystalline diamond (SCD). Nano-indentation measurement was conducted on the {100} plane of SCD, and influences of various factors on measured results were analyzed, from which methods were confirmed to improve veracity of measurement. Properties of the indenter were checked with a fused silica sample both before and after indentation on diamond, which provided guarantee to veracity of results on diamond. It was found that tilt of diamond surface had so great influence that it could damage the indenter, and make the indentation curves anomalous. While damage of indenter could be avoided and valid measurement results could be obtained when tilt of diamondsurface was decreased below 0.10º and the maximal indentation force was less than 10 mN. Deformation of the diamond was almost full-elastic during indentation process. Indentation hardness of {100} plane of the SCD was about 70 GPa with standard deviation less than 3 GPa. And there had good reproducibility between two groups of measurements.


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