Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy

2008 ◽  
Vol 32 (3) ◽  
pp. 186-195 ◽  
Author(s):  
Jiwang Yan ◽  
Tooru Asami ◽  
Tsunemoto Kuriyagawa
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Nondestructive Measurement ◽  
Crystal Silicon ◽  
Micro Raman Spectroscopy

Nondestructive measurement of subsurface structural defects in polished single-crystal silicon

Optics News ◽  
1986 ◽  
Vol 12 (2) ◽  
pp. 10 ◽  
Author(s):  
Robert M. Silva ◽  
Fred D. Orazio Jr. ◽  
Jean M. Bennett
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Structural Defects ◽  
Nondestructive Measurement ◽  
Crystal Silicon

Structural study of TiO2 thin films by micro-Raman spectroscopy

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ahti Niilisk ◽  
Mart Moppel ◽  
Martti Pärs ◽  
Ilmo Sildos ◽  
Taavi Jantson ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Single Crystal ◽  
Anatase Phase ◽  
Single Crystal Silicon ◽  
Atomic Layer ◽  
Fused Silica ◽  
Tio2 Thin Films ◽  
Crystal Silicon ◽  
Sapphire Substrates

AbstractThe Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy

2010 ◽  
Vol 645-648 ◽  
pp. 551-554
Author(s):  
Makoto Yamaguchi ◽  
M. Fujitsuka ◽  
S. Ueno ◽  
I. Miura ◽  
W. Erikawa ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Phonon Frequency ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Frequency Shifts ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study ◽  
Micro Raman Spectroscopy ◽  
Indentation Damage

Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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