Fabrication technique for a custom implant emergence profile on 3D printed casts

The capability of three-dimensional printed cut-wire metasurfaces to harvest energy in frequencies around 2.4 GHz, is studied in this paper. Cut-wire metasurfaces were constructed using the Fused Filament Fabrication technique. In particular, two metasurfaces, consisting of different materials were produced. The first was constructed using Polylactic Acid as starting material. Then, the printed metasurface was covered with a thin layer of conductive silver paint, in order to achieve good electrical conductivity. The other metasurface was built using commercially available, conductive Electrifi. Both metasurfaces exhibit good energy harvesting behavior, in the frequency band near 2.4 GHz. Their harvesting efficiency is found to be almost three times lower than that obtained for conventional PCB-printed cut-wire metasurfaces. Nevertheless, all of the experimental results presented here strongly corroborate that three-dimensional-printed metasurfaces can be potentially used to harvest energy in the 2.4 GHz frequency band.

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Mode of bond failure between 3D-printed denture teeth and printed resin base material; effect of fabrication technique and dynamic loading. An in-vitro study

The International Journal of Prosthodontics ◽

10.11607/ijp.6992 ◽

2021 ◽

Author(s):

N Alharbi ◽

A Alharbi ◽

R Osman

Keyword(s):

Dynamic Loading ◽

Base Material ◽

In Vitro Study ◽

Vitro Study ◽

Fabrication Technique ◽

Bond Failure ◽

Denture Teeth ◽

3D Printed

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UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130353 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1144-1145

Author(s):

T. Sato ◽

S. Kitamura ◽

T. Sueyoshl ◽

M. Iwatukl ◽

C. Nielsen

Keyword(s):

High Temperature ◽

Relaxation Process ◽

Thermal Effect ◽

Bias Voltage ◽

Silicon Surface ◽

Growth Process ◽

Tunneling Current ◽

Fabrication Technique ◽

Nano Fabrication ◽

Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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