Calculating electron range values mathematically

2004 ◽  
Vol 71 (1-2) ◽  
pp. 581-584 ◽  
Author(s):  
Thomas F Lisanti
Keyword(s):  
1997 ◽  
Vol 3 (S2) ◽  
pp. 881-882 ◽  
Author(s):  
Dale E. Newbury

Throughout the history of electron-beam X-ray microanalysis, analysts have made good use of the strong dependence of electron range on incident energy (R ≈ E1,7) to optimize the analytical volume when attacking certain types of problems, such as inclusions in a matrix or layered specimens. The “conventional” energy range for quantitative electron beam X-ray microanalysis can be thought of as beginning at 10 keV and extending to the upper limit of the accelerating potential, typically 30 - 50 keV depending on the instrument. The lower limit of 10 keV is selected because this is the lowest incident beam energy for which there is a satisfactory analytical X-ray peak excited from the K-, L-, or M- shells (in a few cases, two shells are simultaneously excited, e.g., Fe-K and Fe-L) for every element in the Periodic Table that is accessible to X-ray spectrometry, beginning with Be (Ek =116 eV) and extending to the transuranic elements. This criterion is based upon establishing a minimum overvoltage U = E0/Ec > 1.25, which is the practical minimum for useful excitation.


1988 ◽  
Vol 35 (6) ◽  
pp. 1294-1299 ◽  
Author(s):  
A. Fleetwood ◽  
R. Fleetwood ◽  
K. Kerris ◽  
G. Merkel ◽  
M. Smith

1998 ◽  
Vol 4 (S2) ◽  
pp. 194-195
Author(s):  
Dale E. Newbury

The development of energy dispersive x-ray spectrometry (EDS) has had a profound impact on the methodology of quantitative x-ray microanalysis of thick specimens (i.e., thickness≫ electron range) as performed in electron beam instruments. By equipping the scanning electron microscope (SEM) with EDS, quantitative x-ray microanalysis has become commonly available to a wide range of users, at least some of whom have only a modest background in analytical science. An important aspect of the development of quantitative analysis by EDS has been the extensive analytical experience gained during the development of the electron probe microanalyzer (EPMA) equipped with wavelength dispersive x-ray spectrometers (WDS). The critical measurement step for quantitative WDS analysis was recognized to be the determination of the “k-value”:k = Iunk / Istd (1)where I is the measured characteristic intensity of a specific x-ray peak, corrected for background and peak overlaps, for both the unknown and the standard.


Author(s):  
T. H. Newman ◽  
R. F. W. Pease ◽  
K. J. Polasko ◽  
Y. W. Yau

Two prominent problems of electron beam lithography are slow throughput and proximity effects. The former arises from the serial nature of the exposure process; the current available in a beam of given resolution is limited by electron optical considerations and the resist sensitivity is limited by material considerations such that a dose of 1 μC/cm2 at 20 kV is required for the most sensitive resist and ten times that dose if high resolution is required.Proximity effects are caused by electrons scattered through lateral distances greater than the resolution of the pattern; a 20 keV electron in silicon has a range of about 3 μm whereas feature sizes are often less than 1 μm. Lowering the energy of the exposing electrons to, say, 2 keV would lower the electron range to less than 0.1 μm in silicon and thus effectively eliminate proximity effects as far as semiconductor circuit fabrication is concerned.


1991 ◽  
Vol 169 (1-4) ◽  
pp. 439-440
Author(s):  
Kent S. Wood ◽  
Michael M. Lovellette ◽  
Deborah Van Vechten

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