Residual stress in porous silicon film with micro-Raman spectroscopy

Residual stress in coatings often affects the service performance of coatings, and the residual stresses in some local areas even lead to premature failure of coatings. In this work, we characterized the residual stress of local micro-areas of a nanocrystalline Cr2O3 coating deposited on a Si wafer through micro-Raman spectroscopy, including the depositional edge zone where the electrode was placed, the micro-area containing Cr2O3 macroparticles, and other micro-areas vulnerable to cracks. To accurately measure the thickness of the coating, we combined optical interferometry and direct measurement by a profilometer. The results indicate the existence of in-plane tensile residual stress on the Cr2O3 coating. In thick coatings, the residual stress is independent of the coating thickness and is stable between 0.55 GPa and 0.75 GPa. As the coating thickness is less than 0.8 μm, the residual stress is directly related to the coating thickness. This in-plane tensile stress is considered as the origin of the observed microcrack, which can partially release the stress.

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A metrology of silicon film thermal conductivity using micro-Raman spectroscopy

2010 IEEE International SOI Conference (SOI) ◽

10.1109/soi.2010.5641397 ◽

2010 ◽

Cited By ~ 3

Author(s):

Xi Liu ◽

Xiaoming Wu ◽

Tianling Ren

Keyword(s):

Thermal Conductivity ◽

Raman Spectroscopy ◽

Silicon Film ◽

Micro Raman Spectroscopy

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Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.95-96.513 ◽

2003 ◽

Vol 95-96 ◽

pp. 513-518 ◽

Cited By ~ 6

Author(s):

Simona Kouteva-Arguirova ◽

Valeri I. Orlov ◽

Winfried Seifert ◽

Jürgen Reif ◽

Hans Richter

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Phase Transformation ◽

Stress Distribution ◽

Residual Stress Distribution ◽

Silicon Phase ◽

Micro Raman Spectroscopy ◽

Different Temperatures

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THERMAL CONDUCTIVITY OF POROUS SILICON LAYERS PROBED BY MICRO-RAMAN SPECTROSCOPY

Microelectronics, Microsystems and Nanotechnology ◽

10.1142/9789812810861_0063 ◽

2001 ◽

Cited By ~ 1

Author(s):

D. PAPADIMITRIOU ◽

P. TASSIS ◽

L. TSOURA ◽

C. TSAMIS ◽

A. G. NASSIOPOULOU

Keyword(s):

Thermal Conductivity ◽

Raman Spectroscopy ◽

Porous Silicon ◽

Micro Raman Spectroscopy

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Residual stress measurement in a metal microdevice by micro Raman spectroscopy

Journal of Micromechanics and Microengineering ◽

10.1088/1361-6439/aa8912 ◽

2017 ◽

Vol 27 (10) ◽

pp. 105014 ◽

Cited By ~ 3

Author(s):

Chang Song ◽

Liqun Du ◽

Leijie Qi ◽

Yu Li ◽

Xiaojun Li ◽

...

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Stress Measurement ◽

Residual Stress Measurement ◽

Micro Raman Spectroscopy

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Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon

Zeitschrift für Physikalische Chemie ◽

10.1515/zpch-2016-0961 ◽

2017 ◽

Vol 231 (9) ◽

Cited By ~ 4

Author(s):

Sangeetha Periasamy ◽

Sasirekha Venkidusamy ◽

Ragavendran Venkatesan ◽

Jeyanthinath Mayandi ◽

Joshua Pearce ◽

...

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Porous Silicon ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Nanostructures ◽

Micro Raman Spectroscopy ◽

Nanostructured Silicon ◽

Quartz Substrates

Abstract:The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T

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