Preparation, purification and characterization of high purity multi-wall carbon nanotube

A novel transient technique is developed to measure the thermal diffusivity of one-dimensional microscale wires. In this technique, a pulsed nanosecond laser is used to quickly heat the wire. After laser heating, the wire temperature decays slowly. Such temperature decay is sensed and used to determine the thermal diffusivity of the wire. A 25.4 μm thin Pt wire is characterized to verify this technique. The thermal diffusivity of multi-wall carbon nanotube bundles is measured. Based on the measurement result and the inside structure, the thermal diffusivity of individual carbon nanotubes is estimated.

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Processing and Characterization of Graphene and Multi-wall Carbon Nanotube-Reinforced Aluminium Alloy AA2219 Composites Processed by Ball Milling and Vacuum Hot Pressing

Metallography Microstructure and Analysis ◽

10.1007/s13632-017-0365-6 ◽

2017 ◽

Vol 6 (4) ◽

pp. 289-303 ◽

Cited By ~ 5

Author(s):

Lava Kumar Pillari ◽

A. K. Shukla ◽

S. V. S. Narayana Murty ◽

V. Umasankar

Keyword(s):

Carbon Nanotube ◽

Aluminium Alloy ◽

Ball Milling ◽

Hot Pressing ◽

Vacuum Hot Pressing ◽

Multi Wall Carbon Nanotube

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Synthesis of TiO2 nanoparticles and decorated multi-wall carbon nanotube (MWCNT) with anatase TiO2 nanoparticles and study of optical properties and structural characterization of TiO2/MWCNT nanocomposite

Optik ◽

10.1016/j.ijleo.2017.09.078 ◽

2017 ◽

Vol 149 ◽

pp. 447-454 ◽

Cited By ~ 37

Author(s):

Mohammad Bagher Askari ◽

Zoha Tavakoli Banizi ◽

Majid Seifi ◽

Sedigheh Bagheri Dehaghi ◽

Payam Veisi

Keyword(s):

Optical Properties ◽

Carbon Nanotube ◽

Tio2 Nanoparticles ◽

Structural Characterization ◽

Anatase Tio2 ◽

Multi Wall Carbon Nanotube

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Microwave characterization of a single multi-wall carbon nanotube

2012 International Conference on Electromagnetics in Advanced Applications ◽

10.1109/iceaa.2012.6328695 ◽

2012 ◽

Author(s):

A. Katsounaros ◽

J. Zhang ◽

Y. Hao

Keyword(s):

Carbon Nanotube ◽

Microwave Characterization ◽

Multi Wall Carbon Nanotube

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TEM characterization of WSix films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171973 ◽

1994 ◽

Vol 52 ◽

pp. 848-849

Author(s):

V. C. Kannan ◽

S. M. Merchant ◽

R. B. Irwin ◽

A. K. Nanda ◽

M. Sundahl ◽

...

Keyword(s):

Integrated Circuits ◽

Vapor Deposition ◽

High Purity ◽

Physical Vapor Deposition ◽

Thermal Treatments ◽

Rapid Thermal Anneal ◽

Tungsten Silicide ◽

Tem Characterization ◽

Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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