In-situ study of Nb oxide and hydride on thin films using electron energy loss spectroscopy

Carbon materials such as isotropic graphite and C/C composite are widely used for first walls or divertor plates in fusion reactors such as JT-60. In this respect, as well as from fundamental viewpoints, observations of microstructural change in ion-irradiated graphite is important. Although radiation damage in carbon materials has widely been studied, there are few data in this field examined by Electron Energy Loss Spectroscopy. The present paper reports the results of in-situ EELS observation of ion-irradiated crystalline graphite.Specimens used in this experiment were pseudo-monocrystal graphite supplied from Le Carbone Lorraine. Thin films of the graphite suitable for transmission electron microscopy were made by crashing a small portion of the sample in a mortar with npropyl alcohol. The resultant flake-like thin films were scooped up with a micro mesh, and then irradiated with 10 keV ions at an ambient temperature with a flux of 6.3×1013H/cm2s. The apparatus schematically shown in Fig.1 was used for the ion irradiation as well as for electron microscopy and electron energy loss spectroscopy.

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In Situ Study of Nb Oxide and Hydride for SRF Cavity Applications Using Aberration-Corrected STEM and Electron Energy Loss Spectroscopy

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2012.2236380 ◽

2013 ◽

Vol 23 (3) ◽

pp. 7100703-7100703

Author(s):

R. Tao ◽

R. F. Klie

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

In Situ Study ◽

Aberration Corrected Stem ◽

Electron Energy Loss ◽

Srf Cavity ◽

Aberration Corrected

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In-situ study of Nb hydride for SRF cavity applications using aberration-corrected STEM and electron energy loss spectroscopy

Microscopy and Microanalysis ◽

10.1017/s1431927613005023 ◽

2013 ◽

Vol 19 (S2) ◽

pp. 606-607

Author(s):

R. Tao ◽

R.F. Klie ◽

L. Cooley ◽

A. Romanenko

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

In Situ Study ◽

Aberration Corrected Stem ◽

Electron Energy Loss ◽

Srf Cavity ◽

Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

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Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0371 ◽

2017 ◽

Author(s):

T. Dewolf ◽

D. Cooper ◽

N. Bernier ◽

V. Delaye ◽

A. Grenier ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Hafnium Dioxide ◽

Switching Mechanism ◽

Transmission Electron ◽

Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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