Nanoindentation of crystalline silicon pillars fabricated by soft UV nanoimprint lithography and cryogenic deep reactive ion etching

2018 ◽  
Vol 283 ◽  
pp. 65-78 ◽  
Author(s):  
Gerry Hamdana ◽  
Prabowo Puranto ◽  
Jannick Langfahl-Klabes ◽  
Zhi Li ◽  
Frank Pohlenz ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Crystalline Silicon ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Silicon Pillars

scholarly journals Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching

2020 ◽  
Vol 28 (10) ◽  
pp. 15542 ◽  
Author(s):  
Christopher A. Dirdal ◽  
Geir Uri Jensen ◽  
Hallvard Angelskår ◽  
Paul Conrad Vaagen Thrane ◽  
Jo Gjessing ◽  
...  
Keyword(s):  
High Throughput ◽  
Nanoimprint Lithography ◽  
Reactive Ion Etching ◽  
Large Area ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

scholarly journals Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 501
Author(s):  
Angela M. Baracu ◽  
Christopher A. Dirdal ◽  
Andrei M. Avram ◽  
Adrian Dinescu ◽  
Raluca Muller ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Nanoimprint Lithography ◽  
High Performance ◽  
Reactive Ion Etching ◽  
Research Field ◽  
Si Substrate ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Aspect Ratios ◽  
Sidewall Surface

The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions, often require fabrication techniques with high aspect ratios (HARs). Bosch and Cryogenic methods are the best etching candidates of industrial relevance towards the fabrication of these nanostructures. In this paper, we present the fabrication of Silicon (Si) metalenses by the UV-Nanoimprint Lithography method and cryogenic Deep Reactive Ion Etching (DRIE) process and compare the results with the same structures manufactured by Bosch DRIE both in terms of technological achievements and lens efficiencies. The Cryo- and Bosch-etched lenses attain efficiencies of around 39% at wavelength λ = 1.50 µm and λ = 1.45 µm against a theoretical level of around 61% (for Si pillars on a Si substrate), respectively, and process modifications are suggested towards raising the efficiencies further. Our results indicate that some sidewall surface roughness of the Bosch DRIE is acceptable in metalense fabrication, as even significant sidewall surface roughness in a non-optimized Bosch process yields reasonable efficiency levels.

Streamlined cryogenic deep reactive ion etching protocol for hybrid micronozzle arrays

2011 ◽  
Vol 21 (10) ◽  
pp. 105001
Author(s):  
Ahmet Erten ◽  
Milan Makale ◽  
Xuekun Lu ◽  
Bernd Fruhberger ◽  
Santosh Kesari ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

scholarly journals Correction to Ultrahigh Resolution Titanium Deep Reactive Ion Etching

2017 ◽  
Vol 9 (27) ◽  
pp. 23263-23263
Author(s):  
Bryan W. K. Woo ◽  
Shannon C. Gott ◽  
Ryan A. Peck ◽  
Dong Yan ◽  
Mathias W. Rommelfanger ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ultrahigh Resolution ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

Modeling and simulation of the lag effect in a deep reactive ion etching process

2006 ◽  
Vol 16 (12) ◽  
pp. 2570-2575 ◽  
Author(s):  
Yiyong Tan ◽  
Rongchun Zhou ◽  
Haixia Zhang ◽  
Guizhang Lu ◽  
Zhihong Li
Keyword(s):  
Modeling And Simulation ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Lag Effect
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