AMoO4 (A = Mg, Ni) molybdates: Phase stabilities, electronic structures and chemical bonding properties from first principles

2010 ◽  
Vol 12 (10) ◽  
pp. 1779-1785 ◽  
Author(s):  
S.F. Matar ◽  
A. Largeteau ◽  
G. Demazeau
2010 ◽  
Vol 377 (1-3) ◽  
pp. 109-114 ◽  
Author(s):  
S.F. Matar ◽  
M. Nakhl ◽  
A.F. Al Alam ◽  
N. Ouaini ◽  
B. Chevalier

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4221
Author(s):  
Yongxin Jian ◽  
Zhifu Huang ◽  
Yu Wang ◽  
Jiandong Xing

First-principles calculations based on density functional theory (DFT) have been performed to explore the effects of Si, Cr, W, and Nb elements on the stability, mechanical properties, and electronic structures of MoAlB ternary boride. The five crystals, with the formulas of Mo4Al4B4, Mo4Al3SiB4, Mo3CrAl4B4, Mo3WAl4B4, and Mo3NbAl4B4, have been respectively established. All the calculated crystals are thermodynamically stable, according to the negative cohesive energy and formation enthalpy. By the calculation of elastic constants, the mechanical moduli and ductility evolutions of MoAlB with elemental doping can be further estimated, with the aid of B/G and Poisson’s ratios. Si and W doping cannot only enhance the Young’s modulus of MoAlB, but also improve the ductility to some degree. Simultaneously, the elastic moduli of MoAlB are supposed to become more isotropic after Si and W addition. However, Cr and Nb doping plays a negative role in ameliorating the mechanical properties. Through the analysis of electronic structures and chemical bonding, the evolutions of chemical bondings can be disclosed with the addition of dopant. The enhancement of B-B, Al/Si-B, and Al/Si-Mo bondings takes place after Si substitution, and W addition apparently intensifies the bonding with B and Al. In this case, the strengthening of chemical bonding after Si and W doping exactly accounts for the improvement of mechanical properties of MoAlB. Additionally, Si doping can also improve the Debye temperature and melting point of the MoAlB crystal. Overall, Si element is predicted to be the optimized dopant to ameliorate the mechanical properties of MoAlB.


1997 ◽  
Vol 7 (12) ◽  
pp. 2547-2550 ◽  
Author(s):  
Ph. Barbarat ◽  
S. F. Matar ◽  
G. Le Blevennec

2003 ◽  
Vol 805 ◽  
Author(s):  
Y. Ishii ◽  
K. Nozawa ◽  
T. Fujiwara

ABSTRACTElectronic structures of hexagonal Zn-Mg-Y and Cd58Y13 compounds are studied by first-principles calculations. Both of the systems show deep pseudogap in the electronic density of states near the Fermi level and considered to be stabilized electronically. To illustrate bonding nature of electronic wavefunctions, the crystal orbital Hamilton population (COHP) is calculated for neighboring pairs of atoms in the unit cell. It is found that the bonding nature is changed from bonding to anti-bonding almost exactly at the Fermi level for Zn-Zn and Cd-Cd bonds. On the contrary, for Zn/Cd-Y bonds, both of the states below and above the pseudogap behave as bonding ones. Possible effects of the p-d hybridization are discussed.


2011 ◽  
Vol 197-198 ◽  
pp. 567-570
Author(s):  
Qi Jun Liu ◽  
Zheng Tang Liu ◽  
Li Ping Feng ◽  
Hao Tian

We have performed ab-initio total energy calculations using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT) to study structural parameters, electronic structure, chemical bonding and optical properties of orthorhombic Li2BeSiO4. The calculated lattice parameters are in agreement with experimental data. The band structure shows a direct band gap. From the DOS analysis, charge densities and population analysis, electronic and chemical bonding properties have been studied. Furthermore, in order to understand the mechanism of optical transitions of orthorhombic Li2BeSiO4, the complex dielectric functions are calculated and analysed.


RSC Advances ◽  
2016 ◽  
Vol 6 (49) ◽  
pp. 43191-43204 ◽  
Author(s):  
Y. F. Li ◽  
B. Xiao ◽  
L. Sun ◽  
Y. M. Gao ◽  
Y. H. Cheng

The creation of stacking fault in Al4SiC4 crystal structure due to a phonon mode (E1, 139.7 cm−1, Raman active) at Γ-point with negative mode-Grüneisen constant (−0.28). (a) 3-D side-view; (b) 2-D side view.


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