InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current
2016 ◽
Vol 93
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pp. 144-152
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Keyword(s):
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2020 ◽
Vol 67
(5)
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pp. 2106-2112
2017 ◽
Vol 38
(12)
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pp. 1661-1664
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Keyword(s):