Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range

2019 ◽  
Vol 128 ◽  
pp. 373-381 ◽  
Author(s):  
Arvind Kumar ◽  
Ashwani Kumar ◽  
K.K. Sharma ◽  
Subhash Chand
Keyword(s):  
Schottky Diode ◽  
Wide Temperature Range ◽  
Transport Mechanism ◽  
Anomalous Transport ◽  
Temperature Range

The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range

2019 ◽  
Vol 49 (1) ◽  
pp. 402-409 ◽  
Author(s):  
İkram Orak ◽  
Zakir Caldiran ◽  
Mete Bakir ◽  
Osman S. Cifci ◽  
Adem Kocyigit
Keyword(s):  
Schottky Diode ◽  
Wide Temperature Range ◽  
Temperature Range

scholarly journals Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

2021 ◽  
Vol 2065 (1) ◽  
pp. 012013
Author(s):  
Guofang Yu ◽  
Jie Cui ◽  
Yue Zhao ◽  
Jun Fu ◽  
Tian-Ling Ren
Keyword(s):  
Wide Temperature Range ◽  
Silicon Germanium ◽  
Transport Mechanism ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Base Current ◽  
Temperature Range ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 K has been investigated. The measured Gummel characteristics illustrate that the collector current and base current both shift to the higher voltage as the temperature decreases. The fT/fmax are extracted to be 23/40 GHz at 300K, 28/40 GHz at 90 K, and 25/37GHz at 10K, respectively. The effective amplification range becomes narrow as the temperature decreases. And the ideality factor of base current in the low current region is shown to be temperature-dependent and its value is much larger than 2 at cryogenic temperatures. This phenomenon indicates that the base current is not only contributed by drift, diffusion, and Shockley-Read-Hall recombination, but also by trap-assisted tunneling. The Hurkx local trap-assisted tunneling has been used to analyze the non-ideal base transport mechanism. And a calibrated TCAD device model is developed to further verify this non-ideal transport mechanism.

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range
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