The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

2021 ◽  
pp. 106987
Author(s):  
Guangyuan Jiang ◽  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Yang Liu ◽  
Mingyan Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Barrier Layer Thickness ◽  
Polarization Coulomb Field Scattering ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
The Relationship

scholarly journals Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075212
Author(s):  
Guangyuan Jiang ◽  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Yongxiong Yang ◽  
Yang Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Electron Systems ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

2002 ◽  
Vol 743 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Takehiko Tawara ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
High Transconductance

ABSTRACTElectron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

2012 ◽  
Vol 112 (5) ◽  
pp. 054513 ◽  
Author(s):  
Chongbiao Luan ◽  
Zhaojun Lin ◽  
Zhihong Feng ◽  
Lingguo Meng ◽  
Yuanjie Lv ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
Sign in / Sign up

Export Citation Format

Share Document