Stopping power spectra of 4He ions in Zn, Cd and Pb-based semiconductors: A theoretical study for Rutherford Backscattering Spectroscopy analysis of metal chalcogenide thin films thickness

2022 ◽  
Vol 341 ◽  
pp. 114580
Author(s):  
Simón Roa Díaz
Keyword(s):  
Thin Films ◽  
Theoretical Study ◽  
Power Spectra ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Stopping Power ◽  
Spectroscopy Analysis ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

Photoelectrochemical Performance of MoBiInSe5 Mixed Metal Chalcogenide Thin Films

2015 ◽  
Vol 2 (4-5) ◽  
pp. 1458-1463 ◽  
Author(s):  
R.M. Mane ◽  
S.S. Mali ◽  
V.B. Ghanwat ◽  
V.V. Kondalkar ◽  
K.V. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Performance ◽  
Metal Chalcogenide ◽  
Mixed Metal ◽  
Chalcogenide Thin Films

Rutherford backscattering spectroscopy analysis of Au/Cr/GaAs

1999 ◽  
Author(s):  
D. Pantelica ◽  
F. Negoita ◽  
Rodica V. Ghita ◽  
D. Cengher ◽  
S. Lazanu
Keyword(s):  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Spectroscopy Analysis

scholarly journals Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

2016 ◽  
Vol 52 (28) ◽  
pp. 5007-5010 ◽  
Author(s):  
Ruihong Zhang ◽  
Seonghyuk Cho ◽  
Daw Gen Lim ◽  
Xianyi Hu ◽  
Eric A. Stach ◽  
...  
Keyword(s):  
Thin Films ◽  
Primary Amine ◽  
Electronic Devices ◽  
Solvent Mixtures ◽  
Metal Chalcogenides ◽  
Ambient Conditions ◽  
Metal Chalcogenide ◽  
Molecular Precursors ◽  
Metal Metal ◽  
Chalcogenide Thin Films

Bulk metals and metal chalcogenides are found to dissolve in primary amine–dithiol solvent mixtures at ambient conditions.

Wafer-scale metal chalcogenide thin films via an ion exchange approach

2020 ◽  
Vol 8 (41) ◽  
pp. 14393-14401
Author(s):  
Huihui Chen ◽  
Chuanbao Cao ◽  
Binghui Ge ◽  
Yongkai Li ◽  
Junfeng Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Ion Exchange ◽  
Optoelectronic Properties ◽  
Metal Chalcogenide ◽  
Wafer Scale ◽  
Chalcogenide Thin Films

Developing facile and controllable ways to tune the optoelectronic properties of metal chalcogenide thin films via chemical composition is of significant importance for boosting their application in various functional devices.

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