Characterization of near-surface electrical properties of multi-crystalline silicon wafers

2011 ◽  
Vol 55 (1) ◽  
pp. 29-36 ◽  
Author(s):  
P. Drummond ◽  
A. Kshirsagar ◽  
J. Ruzyllo
Keyword(s):  
Electrical Properties ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Near Surface

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation

2008 ◽  
Vol 389-390 ◽  
pp. 469-474 ◽  
Author(s):  
Ji Wang Yan ◽  
Tooru Asami ◽  
Tsunemoto Kuriyagawa
Keyword(s):  
Nd:Yag Laser ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Recovery Process ◽  
Complete Recovery ◽  
Amorphous Layer ◽  
Boundary Region ◽  
Silicon Wafers ◽  
Near Surface ◽  
Transmission Electron

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

Sheet resistance characterization of laser-doped lines on crystalline silicon wafers for photovoltaic applications

2011 ◽  
Vol 95 (3) ◽  
pp. 974-980 ◽  
Author(s):  
Kee Soon Wang ◽  
Budi S. Tjahjono ◽  
Johnson Wong ◽  
Ashraf Uddin ◽  
Stuart R. Wenham
Keyword(s):  
Sheet Resistance ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Photovoltaic Applications

Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors

2011 ◽  
Vol 519 (22) ◽  
pp. 7621-7626 ◽  
Author(s):  
P.J. Drummond ◽  
D. Bhatia ◽  
A. Kshirsagar ◽  
S. Ramani ◽  
J. Ruzyllo
Keyword(s):  
Electrical Properties ◽  
Near Surface

Processing of Silicon Wafers Followed by Microwave Photoconductivity Measurements

1990 ◽  
Vol 189 ◽  
Author(s):  
A. Sanders ◽  
H. Wetzel ◽  
M. Kunst
Keyword(s):  
Quality Control ◽  
Process Control ◽  
Crystalline Silicon ◽  
Electronic Devices ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity

ABSTRACTThe characterization of single crystalline silicon wafers for application in (opto)electronic devices by transient photoconductivity measurements is investigated. To this aim is the transient photoconductivity in Si wafers after different treatments determined by the Time Resolved Microwave Conductivity ( TRMC ) method. This technique is non-evasive and contactless and so in-situ measurements are possible. Application of TRMC measurements for process control and quality control of relevant process steps in the production of (opto)electronic devices is discussed in view of the experimental results presented.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

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