Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation

2008 ◽  
Vol 389-390 ◽  
pp. 469-474 ◽  
Author(s):  
Ji Wang Yan ◽  
Tooru Asami ◽  
Tsunemoto Kuriyagawa
Keyword(s):  
Nd:Yag Laser ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Recovery Process ◽  
Complete Recovery ◽  
Amorphous Layer ◽  
Boundary Region ◽  
Silicon Wafers ◽  
Near Surface ◽  
Transmission Electron

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Using Ion Beams to Modify Nanocrystalline Composites: Co Nanoparticles in Sapphire

2001 ◽  
Vol 703 ◽  
Author(s):  
A. Meldrum ◽  
K.S. Beaty ◽  
M. Lam ◽  
C.W. White ◽  
R.A. Zuhr ◽  
...  
Keyword(s):  
Surface Region ◽  
Amorphous Layer ◽  
Ion Beams ◽  
Near Surface ◽  
Nanocrystalline Composites ◽  
Transmission Electron ◽  
Co Nanoparticles ◽  
20 Nm ◽  
And Control ◽  
Single Crystal Sapphire

ABSTRACTIon implantation and thermal processing were used to create a layer of Co nanoclusters embedded in the near-surface region of single-crystal sapphire. The Co nanoparticles ranged in size from 2-20 nm and were crystallographically aligned with the host sapphire. Specimens were irradiated with Xe and Pt ions, and the microstructural evolution of the nanoclusters was investigated by transmission electron microscopy. With increasing Pt or Xe ion dose, the Co nanoparticles lost their initially excellent faceting, although they remained crystalline. The host Al2O3 became amorphous and the resulting microstructure consisted of a buried amorphous layer containing the still-crystalline Co nanoparticles. EDS mapping and electron diffraction were used to determine the distribution of the implanted species, and the magnetic properties of the composite were measured with a SQUID magnetometer. The results show that ion beams can be applied to modify and control the properties of ferromagnetic nanocomposites, and, combined with lithographic techniques, will find applications in exercising fine-scale spatial control over the properties of magnetic materials.

Deformation in Mono-Crystalline Silicon Caused by High Speed Single-Point Micro-Cutting

2009 ◽  
Vol 407-408 ◽  
pp. 347-350
Author(s):  
A.Q. Biddut ◽  
Ji Wang Yan ◽  
Liang Chi Zhang ◽  
Tsutomu Ohta ◽  
Tsunemoto Kuriyagawa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Feed Rate ◽  
High Speed ◽  
Crystalline Silicon ◽  
Single Point ◽  
Cutting Speed ◽  
Amorphous Layer ◽  
Depth Of Cut ◽  
Transmission Electron ◽  
Unknown Peak

This paper investigates the deformation in monocrystalline silicon subjected to single-point cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

Processing Grinding-Damaged Silicon Wafers by High-Frequency Nano-Second Laser Irradiation

2009 ◽  
Vol 76-78 ◽  
pp. 451-456
Author(s):  
Ji Wang Yan ◽  
Sei Ya Muto ◽  
Tsunemoto Kuriyagawa
Keyword(s):  
Energy Density ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
High Frequency ◽  
Laser Energy ◽  
Large Diameter ◽  
Silicon Wafers ◽  
Density Level ◽  
Transmission Electron ◽  
Beam Center

Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

A Novel Process to Form Epitaxial Si Structures With Buried Silicide

1991 ◽  
Vol 235 ◽  
Author(s):  
YU. N. Erokhin ◽  
R. Grotzschel ◽  
S. R. Oktyabrski ◽  
S. Roorda ◽  
W. Sinke ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Cross Sectional ◽  
X Ray ◽  
Metal Atoms ◽  
Transmission Electron ◽  
High Metal

ABSTRACTThe interaction during low temperature thermal annealing of metal atoms from a Ni film evaporated on top of Si structures with a buried amorphous layer formed by ion implantation has been investigated. Rutherford Backscattering Spectrometry (RBS)/channeling, cross-sectional transmission electron microscopy (XTEM) and X-ray microanalysis were used to determine structures and compositions. It is shown that the combination of such silicon properties as the increased rate of silicidation reaction for amorphous silicon with respect to the crystalline one in combination with high metal atom diffusivity leads to formation of buried epitaxial Ni silicide islands at the interface between the amorphous and the top crystalline silicon layers. During thermal annealing at temperatures as low as 350° C, these islands move through the a-Si layer leaving behind epitaxially recrystallized Si.

Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

2003 ◽  
Vol 792 ◽  
Author(s):  
Gerhard Hobler ◽  
Alois Lugstein ◽  
Wolfgang Brezna ◽  
Emmerich Bertagnolli
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Binary Collision ◽  
Focused Ion Beams ◽  
Active Devices ◽  
Transmission Electron

ABSTRACTApplication of focused ion beams (FIB) to circuit modification during design and debugging of integrated circuits is limited by the degradation of active devices due to beam induced crystal damage. In order to investigate FIB induced damage formation theoretically, we have extended our 1-D/2-D binary collision (BC) code IMSIL to allow surface movement due to sputtering. In contrast to other dynamic BC codes, the crystal structure of the target and damage generation during implantation may be taken into account. Using this tool we simulate the milling of trenches in the gate stack of MOSFETs and compare the results with transmission electron microscopy cross sections and charge pumping data. The simulations confirm that damage tails are generated that are a factor of two deeper at relevant defect concentrations than expected by conventional BC simulations. This result is shown to be due to recoil channeling in spite of the fact that a beam-induced surface amorphous layer is present throughout the implant. In addition, we discuss the accuracy of the experimental results and the simulations.

ZnO Nanoparticle Formation in Si by Co-Implantation of Zn+ and O+ Ions

2013 ◽  
Vol 205-206 ◽  
pp. 502-508 ◽  
Author(s):  
Vladimir V. Privezentsev ◽  
Andrey A. Shemukhin ◽  
Dmitrii V. Petrov ◽  
Alexey Yu. Trifonov ◽  
Vladimir V. Saraykin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Amorphous Layer ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Furnace Annealing ◽  
Near Surface ◽  
Transmission Electron

ZnO nanoparticles (NPs) formed in Czochralski-grown n-type (100) silicon substrates have been studied. The NPs were formed by co-implantation of 64Zn+ and 16O+ ions followed by furnace annealing in neutral/inert atmospheres for 1h. High-resolution transmission electron microscopy (HR TEM) of cross-section samples enabled the structural properties of the near surface layers to be characterized after implantation and annealing. The distribution of implant profiles was analyzed by secondary ion mass-spectrometry (SIMS). The surface morphology was studied by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Identification of the phase content of the materials was carried out by high-resolution X-ray diffraction in θ-2θ scanning mode. In as-implanted samples, a big amorphous layer was formed which destroyed the NPs beneath the surface. After furnace annealing from 600 up to 800°C, ZnO(102) NPs with a size of ~7nm were formed in the recrystallization layer. Furnace annealing at temperatures above 900 °C gave rise to a restructuring of the silicon surface and ZnO NPs formed on the sample surface. At temperatures above 1000 °C, out-diffusion of Zn from the sample occurred due to the large diffusion coefficient Zn at these temperatures.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

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