Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Zinc Oxide Thin Film ◽

Effects of Tantalum Doping on Electrical Characteristics of Indium-Gallium-Zinc Oxide Thin-Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2020-02281929mtgabs ◽

2020 ◽

Vol MA2020-02 (28) ◽

pp. 1929-1929

Author(s):

Seung-Ryum Baek ◽

Tae-Yeon Seong

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00257 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13278-13285 ◽

Cited By ~ 26

Author(s):

Kwan Yup Shin ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Seonghwan Hong ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.4801762 ◽

2013 ◽

Vol 102 (14) ◽

pp. 143506 ◽

Cited By ~ 43

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Zinc Oxide Thin Film ◽

Effect of Exposure to Ultraviolet-Activated Oxygen on the Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

ECS Solid State Letters ◽

10.1149/2.005304ssl ◽

2013 ◽

Vol 2 (4) ◽

pp. Q21-Q24 ◽

Cited By ~ 19

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Activated Oxygen ◽

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2013.1479 ◽

2013 ◽

Vol 8 (4) ◽

pp. 361-365 ◽

Cited By ~ 1

Author(s):

Sheng-Po Chang ◽

Tsung-Han Yang ◽

Chao-Jen Ho ◽

Shoou-Jinn Chang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Oxygen Partial Pressure ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00275-z ◽

2021 ◽

Author(s):

Abdelhafid Marroun ◽

Naima Amar Touhami ◽

Taj-eddin El Hamadi

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Conduction Band ◽

Physical Modeling ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Applied Physics Letters ◽

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Cited By ~ 94

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c15017 ◽

2021 ◽

Vol 13 (3) ◽

pp. 4110-4116

Author(s):

Chan Sic Yoon ◽

Hyung Tae Kim ◽

Min Seong Kim ◽

Hyukjoon Yoo ◽

Jeong Woo Park ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxygen Deficiency ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

Vacuum ◽

10.1016/j.vacuum.2011.06.014 ◽

2011 ◽

Vol 86 (3) ◽

pp. 246-249 ◽

Cited By ~ 11

Author(s):

C.J. Chiu ◽

Z.W. Pei ◽

S.T. Chang ◽

S.P. Chang ◽

S.J. Chang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Oxygen Partial Pressure ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.08.104 ◽

2011 ◽

Vol 520 (5) ◽

pp. 1608-1611 ◽

Cited By ~ 15

Author(s):

Geng-Wei Chang ◽

Ting-Chang Chang ◽

Yong-En Syu ◽

Tsung-Ming Tsai ◽

Kuan-Chang Chang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Bottom Gate