Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2013.1479 ◽

2013 ◽

Vol 8 (4) ◽

pp. 361-365 ◽

Author(s):

Sheng-Po Chang ◽

Tsung-Han Yang ◽

Chao-Jen Ho ◽

Shoou-Jinn Chang

Keyword(s):

Thin Film ◽

Oxygen Partial Pressure ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

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Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

Vacuum ◽

10.1016/j.vacuum.2011.06.014 ◽

2011 ◽

Vol 86 (3) ◽

pp. 246-249 ◽

Author(s):

C.J. Chiu ◽

Z.W. Pei ◽

S.T. Chang ◽

S.P. Chang ◽

S.J. Chang

Keyword(s):

Thin Film ◽

Oxygen Partial Pressure ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

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Effects of Tantalum Doping on Electrical Characteristics of Indium-Gallium-Zinc Oxide Thin-Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2020-02281929mtgabs ◽

2020 ◽

Vol MA2020-02 (28) ◽

pp. 1929-1929

Author(s):

Seung-Ryum Baek ◽

Tae-Yeon Seong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00257 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13278-13285 ◽

Author(s):

Kwan Yup Shin ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Seonghwan Hong ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Effect of Exposure to Ultraviolet-Activated Oxygen on the Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

ECS Solid State Letters ◽

10.1149/2.005304ssl ◽

2013 ◽

Vol 2 (4) ◽

pp. Q21-Q24 ◽

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Activated Oxygen ◽

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Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

ETRI Journal ◽

10.4218/etrij.12.0212.0232 ◽

2012 ◽

Vol 34 (6) ◽

pp. 966-969 ◽

Author(s):

Woo-Seok Cheong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Oxygen Binding ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

The Stability ◽

Effect Of Oxygen

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Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20163106.0558 ◽

2016 ◽

Vol 31 (6) ◽

pp. 558-562

Author(s):

孙建明 SUN Jian-ming ◽

周婷婷 ZHOU Ting-ting ◽

任庆荣 REN Qing-rong ◽

胡合合 HU He-he ◽

陈宁 CHEN Ning ◽

...

Keyword(s):

Thin Film ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

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Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00275-z ◽

2021 ◽

Author(s):

Abdelhafid Marroun ◽

Naima Amar Touhami ◽

Taj-eddin El Hamadi

Keyword(s):

Thin Film ◽

Conduction Band ◽

Physical Modeling ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2017.06.030 ◽

2017 ◽

Vol 135 ◽

pp. 43-48 ◽

Author(s):

M. Estrada ◽

Y. Hernandez-Barrios ◽

A. Cerdeira ◽

F. Ávila-Herrera ◽

J. Tinoco ◽

...

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c15017 ◽

2021 ◽

Vol 13 (3) ◽

pp. 4110-4116

Author(s):

Chan Sic Yoon ◽

Hyung Tae Kim ◽

Min Seong Kim ◽

Hyukjoon Yoo ◽

Jeong Woo Park ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxygen Deficiency ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.08.104 ◽

2011 ◽

Vol 520 (5) ◽

pp. 1608-1611 ◽

Author(s):

Geng-Wei Chang ◽

Ting-Chang Chang ◽

Yong-En Syu ◽

Tsung-Ming Tsai ◽

Kuan-Chang Chang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

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