Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.05.023 ◽

2016 ◽

Vol 448 ◽

pp. 105-108 ◽

Cited By ~ 15

Author(s):

Daisuke Iida ◽

Shen Lu ◽

Sota Hirahara ◽

Kazumasa Niwa ◽

Satoshi Kamiyama ◽

...

Keyword(s):

Output Power ◽

Light Output ◽

Light Output Power

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Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/opl.2011.994 ◽

2011 ◽

Vol 1342 ◽

Cited By ~ 11

Author(s):

Atsushi Nishikawa ◽

Naoki Furukawa ◽

Dong-gun Lee ◽

Kosuke Kawabata ◽

Takanori Matsuno ◽

...

Keyword(s):

Layer Thickness ◽

Output Power ◽

Active Layer ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Light Output ◽

Active Layer Thickness ◽

Organometallic Vapor Phase Epitaxy ◽

Light Output Power ◽

Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

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