scholarly journals An N-Channel Band-to-Band Tunneling Flash Memory Design Optimization

2020 ◽  
Vol 2 ◽  
pp. 140-145
Author(s):  
Wing-Kong Ng ◽  
Wing-Shan Tam ◽  
Chi-Wah Kok
Keyword(s):  
Design Optimization ◽  
Flash Memory ◽  
Memory Design ◽  
Band To Band Tunneling

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

2006 ◽  
Vol 50 (3) ◽  
pp. 309-315
Author(s):  
Meng-Yi Wu ◽  
Sheng-Huei Dai ◽  
Kung-Hong Lee ◽  
Shu-Fen Hu ◽  
Ya-Chin King
Keyword(s):  
Flash Memory ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Band To Band Tunneling ◽  
Nor Flash

Current criticalities and innovation perspectives in flash memory design automation

2003 ◽  
Vol 91 (4) ◽  
pp. 581-593 ◽  
Author(s):  
A. Conci ◽  
A. Faldarini ◽  
G. Fumagalli ◽  
A. Girardi ◽  
M. Pesare ◽  
...  
Keyword(s):  
Flash Memory ◽  
Design Automation ◽  
Memory Design

Optimal proximity correction: application for flash memory design

1998 ◽  
Author(s):  
Y. O. Chen ◽  
D. L. Huang ◽  
K. T. Sung ◽  
J. J. Chiang ◽  
M. Yu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Design

Device characteristics of 0.35 μm P-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming

1999 ◽  
Vol 46 (9) ◽  
pp. 1866-1871 ◽  
Author(s):  
T. Ohnakado ◽  
H. Onoda ◽  
O. Sakamoto ◽  
K. Hayashi ◽  
N. Nishioka ◽  
...  
Keyword(s):  
Flash Memory ◽  
Hot Electron ◽  
Band To Band Tunneling
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