Antireflection and passivation property of aluminium oxide thin film on silicon nanowire by liquid phase deposition

2018 ◽  
Vol 350 ◽  
pp. 1058-1064 ◽  
Author(s):  
Che-Chun Lin ◽  
Dong-Sing Wuu ◽  
Jung-Jie Huang
Keyword(s):  
Thin Film ◽  
Liquid Phase ◽  
Silicon Nanowire ◽  
Aluminium Oxide ◽  
Oxide Thin Film ◽  
Liquid Phase Deposition

Synthesis of tungsten oxide thin film by liquid phase deposition

2010 ◽  
Vol 123 (2-3) ◽  
pp. 614-619 ◽  
Author(s):  
Shigehito Deki ◽  
Alexis Bienvenu Béléké ◽  
Yuki Kotani ◽  
Minoru Mizuhata
Keyword(s):  
Thin Film ◽  
Liquid Phase ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
Liquid Phase Deposition

scholarly journals Depositing Mechanism of Metal Oxide Thin Film in the Liquid Phase Deposition Process

2019 ◽  
Vol 16 (46) ◽  
pp. 93-101 ◽  
Author(s):  
Minoru Mizuhata ◽  
Yasuhito Saito ◽  
Mariko Takagi ◽  
Shigehito Deki
Keyword(s):  
Thin Film ◽  
Liquid Phase ◽  
Metal Oxide ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Liquid Phase Deposition ◽  
Metal Oxide Thin Film

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Oxide Thin Film Diode Fabricated by Liquid-Phase Method

1996 ◽  
Vol 35 (Part 1, No. 9A) ◽  
pp. 4738-4742 ◽  
Author(s):  
Yutaka Ohya ◽  
Masayoshi Ueda ◽  
Yasutaka Takahashi
Keyword(s):  
Thin Film ◽  
Liquid Phase ◽  
Oxide Thin Film ◽  
Phase Method ◽  
Liquid Phase Method
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