Investigations of elemental depth distribution and chemical compositions in the TiO2/SiO2/Si structures after ion irradiation

2020 ◽  
Vol 387 ◽  
pp. 125494
Author(s):  
T.V. Phuc ◽  
M. Kulik ◽  
D. Kołodyńska ◽  
L.H. Khiem ◽  
P.L. Tuan ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Ion Irradiation ◽  
Chemical Compositions ◽  
Elemental Depth

Fabrication and Characterisation of Diluted Magnetic Semiconductors Thin Films Using Ion Beams

2012 ◽  
Vol 706-709 ◽  
pp. 2869-2873
Author(s):  
M. Ionescu ◽  
P. Photongkam ◽  
R. Siegele ◽  
A. Deslantes ◽  
S. Li ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Depth Distribution ◽  
Magnetic Semiconductors ◽  
Ion Irradiation ◽  
Research Effort ◽  
Critical Parameters ◽  
Ferromagnetic Behavior ◽  
Diluted Magnetic

The intrinsic n-type (II-VI) semiconductor ZnO may become ferromagnetic at room temperature, by small additions of magnetic ions, resulting in what is called a Diluted Magnetic Semiconductors (DMS). The potential application of DMS in spintronic devices of is driving the research effort to dope magnetic elements into this semiconductors with a depth distribution as uniform as possible. The doping levels and the depth distribution of dopants are critical parameters for the magnetic properties of this material and the possible clustering of dopants can play a significant negative role in its macroscopic magnetic properties. Thin ZnO (0001) films of between 100nm and 500nm, grown on c-Al2O3 by MOCVD were implanted with Co, Eu and Co+Eu by ion irradiation at low energies. In order to improve the depth distribution of dopants, the ion implantation was carried out through a number of appropriately chosen range foils. The results show an increase in the level of dopant homogeneity throughout the entire thickness of the film, and a ferromagnetic behavior above room temperature for Zn0.96Co0.04O, Zn0.96Eu0.04O and Zn0.92Co0.04Eu0.04O.

In‐depth distribution of ion irradiation defects evaluated by mobility of Al0.3Ga0.7As/GaAs two‐dimensional electron gas

1992 ◽  
Vol 61 (17) ◽  
pp. 2084-2086 ◽  
Author(s):  
Yukihiro Takeuchi ◽  
Hajime Soga ◽  
Yoshiki Ueno ◽  
Toshihiko Kanayama ◽  
Yoshinobu Sugiyama ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Ion Irradiation ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Channeling Study of the Damage Induced in Ion-Irradiated Ceramic Oxides

2003 ◽  
Vol 792 ◽  
Author(s):  
Lionel Thomé ◽  
Aurélie Gentils ◽  
Frédérico Garrido ◽  
Jacek Jagielski
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Single Crystals ◽  
Depth Distribution ◽  
Ion Irradiation ◽  
High Energy ◽  
Low Energy ◽  
Ceramic Oxides ◽  
Slowing Down ◽  
Crystalline Ceramic

ABSTRACTThe evaluation of the damage generated in crystalline ceramic oxides placed in a radiative environment is a major challenge in many technological domains. The use of the channeling technique is particularly well adapted to measure the depth distribution of the irradiation-induced disorder and to monitor the damage build-up. This paper describes the methodology used for the study of radiation damage with the channeling technique, presents a new method of analysis of channeling data based on Monte-Carlo simulations and provides recent results concerning the damage induced in ion-bombarded ceramic oxide single crystals in both nuclear (low-energy ion irradiation) and electronic (high-energy ion irradiation) slowing-down regimes.

Doping of ZnO Thin Film with Eu Using Ion Beams

2010 ◽  
Vol 638-642 ◽  
pp. 2962-2969
Author(s):  
Mihail Ionescu ◽  
P. Photongkam ◽  
D. Yu ◽  
R. Siegele ◽  
S. Li ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Ion Irradiation ◽  
Zno Thin Film ◽  
Elastic Recoil ◽  
Zno Film ◽  
Elastic Recoil Detection Analysis ◽  
Ion Energy ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Low Levels

Modification of electric and magnetic properties of ZnO thin films was achieved by low energy Eu ion irradiation. The desired doping levels as well as the depth distribution of the dopant was controlled by the ion energy and the ion flux, following a simulated interaction between the doping ion and the host ZnO matrix of epitaxial ZnO (0001) films of approximatelly 200nm, grown on c-Al2O3 by PLD. The properties of the doped ZnO film depend in a critical way on the homogeneity of the doped ions throughout the entire film. The doping levels and the depth distribution of dopants were measured by elastic recoil detection analysis (ERDA). The results show a uniform depth distribution of Eu, as well as some level of Al diffusion from the substrate and the presence of some low levels of H, N and O. PACS code: 68.49Sf; 74.78Bz

scholarly journals Depth distribution of 20-keV helium ion irradiation induced cavities in nickel

1981 ◽  
Vol 104 ◽  
pp. 1231-1235 ◽  
Author(s):  
G. Fenske ◽  
S.K. Das ◽  
M. Kaminsky
Keyword(s):  
Depth Distribution ◽  
Ion Irradiation ◽  
Helium Ion

Study of Elemental Depth Distribution in the Multilayer Material \(\text{TiO}_2\)/\(\text{SiO}_2\)/Si by Rutherford Backscattering Spectrometry (RBS)

2019 ◽  
Vol 29 (3SI) ◽  
pp. 393
Author(s):  
T. V. Phuc ◽  
M. Kulik ◽  
A. P. Kobzev ◽  
L. H. Khiem
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Multilayer Structures ◽  
Multilayer Material ◽  
Transition Layers ◽  
Before And After ◽  
Elemental Depth ◽  
Irradiation Process

In this study we investigated depth distributions of elements in the multilayer structures of TiO\(_2\)/SiO\(_2\)/Si before and after ion irradiation. The samples were implanted with Ne\(^+\), Ar\(^+\), Kr\(^+\) and Xe\(^+\) ions. For each implantation the multilayer structures were irradiated by the ions with the energy 100, 150, 200 and 250 keV. The elemental concentrations in the samples were analyzed by the Rutherford Backscattering Spectrometry (RBS) method. It was found that the transition layers existed between the TiO\(_2\) and SiO\(_2\) layers. Formation of these layers derived from the ion beam mixing that was occurred at TiO\(_2\)/SiO\(_2\) interface after irradiation process. The depth profiles show that thickness of the transition layers increased with the growing energy and atomic mass of the implanted ions.

Effects of Ion Irradiation on the Microstructure of an ODS/Fe12Cr Alloy

2008 ◽  
Vol 1125 ◽  
Author(s):  
V. de Castro ◽  
S. Lozano-Perez ◽  
M. L. Jenkins
Keyword(s):  
Ion Irradiation ◽  
Chemical Compositions ◽  
Size Distributions ◽  
Before And After

ABSTRACTThis study describes the microstructures of an ODS/Fe12Cr alloy before and after Fe+ irradiation at 500°C to a dose of 2.5 dpa and compares these microstructures with those of a reference Fe12Cr alloy produced following the same pulvimetallurgical route. The grain and dislocation structures of the alloys did not seem to change after irradiation. The main difference after irradiation was the appearance of small loops, which had similar sizes, distribution and densities in the ODS and reference alloys. The size distributions and chemical compositions of the ODS particles were similar to those found before irradiation.

The depth distribution of disorder produced by room temperature 40 keV N+ion irradiation of silicon

1979 ◽  
Vol 41 (2) ◽  
pp. 107-111 ◽  
Author(s):  
A. I. Titov ◽  
C. E. Christodoulides ◽  
G. Carter ◽  
M. J. Nobes
Keyword(s):  
Room Temperature ◽  
Depth Distribution ◽  
Ion Irradiation
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