Influence of the diffusion annealing process in the corrosion susceptibility of cobalt boride layer immersed in Hank's solution

2021 ◽  
pp. 127462
Author(s):  
A.M. Delgado-Brito ◽  
I. Mejía-Caballero ◽  
M. Palomar-Pardavé ◽  
J. Martínez-Trinidad ◽  
I. Campos-Silva
Keyword(s):  
Boride Layer ◽  
Annealing Process ◽  
Diffusion Annealing ◽  
Cobalt Boride ◽  
Corrosion Susceptibility ◽  
Hank’S Solution

Effect of the Diffusion Annealing Process on the Sliding Wear Resistance of Cobalt Boride Layer

2020 ◽  
Vol 29 (1) ◽  
pp. 109-125 ◽  
Author(s):  
A. M. Delgado-Brito ◽  
A. D. Contla-Pacheco ◽  
V. H. Castrejón-Sánchez ◽  
D. López-Suero ◽  
J. Oseguera-Peña ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Sliding Wear ◽  
Boride Layer ◽  
Annealing Process ◽  
Diffusion Annealing ◽  
Cobalt Boride

Effect of the diffusion annealing process in the indentation properties of cobalt boride layer

2019 ◽  
Vol 45 (6) ◽  
pp. 7767-7777 ◽  
Author(s):  
A.M. Delgado-Brito ◽  
D. López-Suero ◽  
A. Ruiz-Ríos ◽  
R.A. García-León ◽  
J. Martínez-Trinidad ◽  
...  
Keyword(s):  
Boride Layer ◽  
Annealing Process ◽  
Diffusion Annealing ◽  
Cobalt Boride

Wear and Scratch Resistance of Cobalt Boride Layer Exposed to a Diffusion Annealing Process

2020 ◽  
Vol 9 (3) ◽  
pp. 20190101
Author(s):  
I. Campos-Silva ◽  
A. D. Contla-Pacheco ◽  
V. H. Castrejón-Sánchez ◽  
A. M. Delgado-Brito ◽  
A. Garduño-Alva ◽  
...  
Keyword(s):  
Scratch Resistance ◽  
Boride Layer ◽  
Annealing Process ◽  
Diffusion Annealing ◽  
Cobalt Boride

Improved fracture toughness of boride coating developed with a diffusion annealing process

2013 ◽  
Vol 237 ◽  
pp. 429-439 ◽  
Author(s):  
I. Campos-Silva ◽  
M. Flores-Jiménez ◽  
G. Rodríguez-Castro ◽  
E. Hernández-Sánchez ◽  
J. Martínez-Trinidad ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Annealing Process ◽  
Boride Coating ◽  
Diffusion Annealing

Diffusional Analysis in Al-Ni Cold Rolled Strip during Annealing Process

2012 ◽  
Vol 487 ◽  
pp. 710-713
Author(s):  
Guo Hui Zhu ◽  
Feng Li Sui ◽  
Qi Wei Chen
Keyword(s):  
Solid Solution ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Rolled Strip ◽  
Diffusion Annealing ◽  
Diffusion Layers ◽  
Diffusion Speed ◽  
Cold Rolled ◽  
Annealing Experiments

Diffusion annealing experiments in Al-Ni cold rolled strip was conducted in nitrogen protection. The characterization of diffusion layers between pure Al and pure Ni metals has been analyzed. The analysis results show that the diffusion layers would be composed of solid-solution of Al in Ni marked as Ni (Al), Ni3Al and Ni5Al3 compounds. During diffusion processing, the diffusion speed of Al to Ni was faster than that of Ni to Al. This implied a possibility to form chemical connection of Al-Ni by solid-solution without intermetallic compounds formation to obtain good mechanical and electric properties through optimizing annealing temperature and holding time.

Evolution of boride layers during a diffusion annealing process

2017 ◽  
Vol 309 ◽  
pp. 155-163 ◽  
Author(s):  
I. Campos-Silva ◽  
M. Flores-Jiménez ◽  
D. Bravo-Bárcenas ◽  
H. Balmori-Ramírez ◽  
J. Andraca-Adame ◽  
...  
Keyword(s):  
Annealing Process ◽  
Diffusion Annealing

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

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