Evaluation of chromotrope FB dye as corrosion inhibitor using electrochemical and theoretical studies for acid cleaning process of petroleum pipeline

2018 ◽  
Vol 12 ◽  
pp. 50-60 ◽  
Author(s):  
Karumalaiyan Palanisamy ◽  
Perumal Kannan ◽  
Alagan Sekar
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Mohamed A. Deyab ◽  
Mohsen Mohammed Al-Qhatani

Abstract To strengthen the thermal desalination units and sustainability of their performance and reduce their corrosion during acid cleaning processes to remove the scale layers, economy and nontoxic strategies are needed. Here we clarify how Bladder wrack extract (BWE) can reduce the corrosion mitigations for thermal units (carbon steel part) during the acid cleaning (1.0 M HCl). We find that the performance of BWE extract reached an excellent value (94.2%) at 500 ppm. The rate of electrochemical reactions is very low in the presence of BWE extract, and is consistent with the mass loss method. The activity of BWE extract as a corrosion inhibitor is due to the presence of mixture of organic compounds inside the extract. These compounds were identified by HPLC, SEM and FT-IR analysis.


Desalination ◽  
2020 ◽  
Vol 495 ◽  
pp. 114675
Author(s):  
I.B. Obot ◽  
M.M. Solomon ◽  
I.B. Onyeachu ◽  
S.A. Umoren ◽  
Abdelkader Meroufel ◽  
...  

1997 ◽  
Vol 477 ◽  
Author(s):  
Hitoshi Morinaga ◽  
Masumi Aoki ◽  
Toshiaki Maeda ◽  
Masaya Fujisue

ABSTRACTNH4OH/H2O2/H2O (called APM or SC–1) cleaning combined with megasonic irradiation is found to feature outstanding removal efficiency for various types of particulate contaminant. The conventional APM cleaning, however, allows metallic impurity in solution to adhere onto substrate surface, and it must be followed by acid cleaning such as HCI/IH2O2/H2O (called HPM or SC–2) cleaning to remove metallic impurity from substrate. The advanced APM cleaning using MC–1 which is alkali cleaning agent containing chelating agent has been developed, and this new cleaning is found capable for preventing various metallic impurities including Al in solution from contaminating substrate surface. Besides, with cleaning conditions optimized, the advanced APM cleaning using MC–1 can also remove metallic impurity from substrate surface. In short, this modified APM cleaning is capable for removing particle and metallic impurity at the same time, which is not possible with the conventional cleaning technology. The cleaning process of semiconductor manufacturing process can be simplified if HPM cleaning is eliminated by introducing the advanced APM cleaning using MC–1. This leads to drastic reduction of cleaning cost and improvement of throughput of the cleaning process.


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