Advanced Alkali Cleaning Solution for Simplification of Semiconductor Cleaning Process

1997 ◽  
Vol 477 ◽  
Author(s):  
Hitoshi Morinaga ◽  
Masumi Aoki ◽  
Toshiaki Maeda ◽  
Masaya Fujisue
Keyword(s):  
Substrate Surface ◽  
Chelating Agent ◽  
Metallic Impurity ◽  
Cleaning Process ◽  
Drastic Reduction ◽  
Acid Cleaning ◽  
Cleaning Solution ◽  
Cleaning Technology ◽  
Cleaning Cost ◽  
Metallic Impurities

ABSTRACTNH4OH/H2O2/H2O (called APM or SC–1) cleaning combined with megasonic irradiation is found to feature outstanding removal efficiency for various types of particulate contaminant. The conventional APM cleaning, however, allows metallic impurity in solution to adhere onto substrate surface, and it must be followed by acid cleaning such as HCI/IH2O2/H2O (called HPM or SC–2) cleaning to remove metallic impurity from substrate. The advanced APM cleaning using MC–1 which is alkali cleaning agent containing chelating agent has been developed, and this new cleaning is found capable for preventing various metallic impurities including Al in solution from contaminating substrate surface. Besides, with cleaning conditions optimized, the advanced APM cleaning using MC–1 can also remove metallic impurity from substrate surface. In short, this modified APM cleaning is capable for removing particle and metallic impurity at the same time, which is not possible with the conventional cleaning technology. The cleaning process of semiconductor manufacturing process can be simplified if HPM cleaning is eliminated by introducing the advanced APM cleaning using MC–1. This leads to drastic reduction of cleaning cost and improvement of throughput of the cleaning process.

Effect of FA/O Chelating Agent on Copper Ion Removing on Silicon Surface

2011 ◽  
Vol 183-185 ◽  
pp. 2284-2287
Author(s):  
Bai Mei Tan ◽  
Xin Huan Niu ◽  
Yan Gang He ◽  
Bao Hong Gao ◽  
Yu Ling Liu
Keyword(s):  
Silicon Wafer ◽  
Removal Rate ◽  
Substrate Surface ◽  
Copper Ion ◽  
Chelating Agent ◽  
Wafer Surface ◽  
Cleaning Solution ◽  
Microelectronics Technology ◽  
Cu Pollution ◽  
Silicon Substrate Surface

Along with the feature size reducing and the increase of integration level rapidly in ULSI，the request for metal impurities contamination on silicon substrate surface appears specially rigorous. In this paper the chelating agent was added in cleaning solution in order to removing copper ion. FA/O, a new kind of chelating agent was studied in RCA cleaning solutions, which has 13 chelating rings and is free of sodium, stable and easily soluble. The XPS and GFAAS measured results indicate that FA/O is more efficient than NH4OH as a ligand. Cu contaminations on silicon wafer can be removed remarkably when adding a little FA/O to the cleaning solution or polishing slurry. When the chelating agent concentration of cleaning solution is 0.1% the removal rate of Cu atom reaches 83 percent. The FA/O chelating agent substituting NH4OH in SC-1 may simplify cleaning steps, and one cleaning step can remove Cu pollution on silicon wafer surface and meet the requirements of microelectronics technology.

High Resolution Stereography of Complementary Freeze-Fracture Replicas Reveals the Presence of Depressions Opposite Membrane Associated Particles of Split Membranes

1971 ◽  
Vol 29 ◽  
pp. 442-443
Author(s):  
Russell L. Steere
Keyword(s):  
High Resolution ◽  
Cardiac Muscle ◽  
Electron Micrographs ◽  
Chromic Acid ◽  
Freeze Fracture ◽  
Distilled Water ◽  
Fine Scale ◽  
Acid Cleaning ◽  
Cleaning Solution

Complementary replicas have revealed the fact that the two common faces observed in electron micrographs of freeze-fracture and freeze-etch specimens are complementary to each other and are thus the new faces of a split membrane rather than the original inner and outer surfaces (1, 2 and personal observations). The big question raised by published electron micrographs is why do we not see depressions in the complementary face opposite membrane-associated particles? Reports have appeared indicating that some depressions do appear but complementarity on such a fine scale has yet to be shown.Dog cardiac muscle was perfused with glutaraldehyde, washed in distilled water, then transferred to 30% glycerol (material furnished by Dr. Joaquim Sommer, Duke Univ., and VA Hospital, Durham, N.C.). Small strips were freeze-fractured in a Denton Vacuum DFE-2 Freeze-Etch Unit with complementary replica tooling. Replicas were cleaned in chromic acid cleaning solution, then washed in 4 changes of distilled water and mounted on opposite sides of the center wire of a Formvar-coated grid.

Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process

2021 ◽  
Vol 314 ◽  
pp. 259-263
Author(s):  
Samrina Sahir ◽  
Hwi Won Cho ◽  
Nagendra Prasad Yerriboina ◽  
Tae Gon Kim ◽  
Satomi Hamada ◽  
...  
Keyword(s):  
Electrostatic Attraction ◽  
Particle Removal ◽  
Cross Contamination ◽  
Cleaning Process ◽  
Particle Loading ◽  
Cleaning Efficiency ◽  
Solution Ph ◽  
Cleaning Solution ◽  
Oppositely Charged ◽  
Process Interaction

Brush scrubbing is a well-known post CMP cleaning process. Interaction between PVA brush and the particles removed during the process must be considered while designing a cleaning process. In this work, the effect of cleaning solution pH was investigated in terms of particle removal from the wafer and subsequent loading to the PVA brush nodule. Higher cleaning of particles from wafer was observed for pH 2 and 12 cleaning solutions and poor cleaning for pH 7 cleaning solution. In contrast, the brushes were loaded heavily for pH 7 compared to pH 2 and 12. Higher electrostatic attraction between oppositely charged PVA and ceria surfaces provided higher ceria particles loading to PVA brush in acidic and neutral cleaning solutions. This particle loading to PVA brush can further effect cleaning efficiency as well as cross-contamination.

Roles of Surfactant Molecules in Post-CMP Cleaning

2005 ◽  
Author(s):  
Dedy Ng ◽  
Milind Kulkarni ◽  
Hong Liang
Keyword(s):  
Surfactant Concentration ◽  
Substrate Surface ◽  
Wafer Surface ◽  
Particle Removal ◽  
Abrasive Particles ◽  
Effective Particle ◽  
Cleaning Solution ◽  
Before And After ◽  
First Time ◽  
Hydrophilic Particles

One major concern in post-CMP cleaning is particles contamination on the substrate surface after the CMP process. These particles can be abrasive particles from the slurry, debris from pad material, and particles of film being polished. The cleaning method used in this study is direct contact of the substrate surface and brush sweeping. To enhance the cleaning process, an anionic surfactant is added in the cleaning solution. In order to understand effects of surfactant molecules on post-CMP cleaning, for the first time, we use a tribological approach over a range of surfactant concentration and temperature. In this regard, we observe how the surfactant behavior before and after it reaches the critical micelles concentration (cmc). Experimental results show that increase in surfactant concentration can promote bilayer interaction of micelles on the hydrophilic particles. Based on our study, we propose an interactive explanation of surface molecules with the wafer surface and nanoparticles through friction. This understanding will serve as a guide on how much surfactant should be added in order to achieve effective particle removal.

Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process

2009 ◽  
Vol 145-146 ◽  
pp. 363-366 ◽  
Author(s):  
Yasa Sampurno ◽  
Yun Zhuang ◽  
Xun Gu ◽  
Sian Theng ◽  
Takenao Nemoto ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Direct Contact ◽  
Chemical Mechanical Planarization ◽  
Wafer Surface ◽  
Poly Vinyl Alcohol ◽  
Particle Removal ◽  
Cleaning Process ◽  
Cleaning Performance ◽  
Cleaning Solution ◽  
Copper Cmp

Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

Mechanisms of Metallic Impurity Deposition on Silicon Substrates Dipped in Cleaning Solution

1995 ◽  
Vol 142 (7) ◽  
pp. 2395-2401 ◽  
Author(s):  
L. Mouche ◽  
F. Tardif ◽  
J. Derrien
Keyword(s):  
Metallic Impurity ◽  
Silicon Substrates ◽  
Cleaning Solution

Megasonic Irradiation Induced Chemical Reaction in the Solution for Silicon Wafer Cleaning

1997 ◽  
Vol 477 ◽  
Author(s):  
T. Ohmi ◽  
M. Toda ◽  
M. Katoh ◽  
K. Kawada ◽  
H. Morita
Keyword(s):  
Chemical Reaction ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Coulomb Force ◽  
Oh Radicals ◽  
Ultrapure Water ◽  
Positive Ions ◽  
Cleaning Solution ◽  
Silicon Wafer Cleaning ◽  
Gas Volume

ABSTRACTWe have already proposed chemical vapor free and room temperature wet cleaning (UCT cleaning) for Si substrate surface, instead of conventional RCA cleaning, which consumes very little amount of chemicals and ultrapure water compared to that of RCA cleaning. This new wet cleaning has been developed by scientifically understanding contaminants removal mechanism as follows;(1) Particles can be removed by simultaneously satisfying following two conditions,(a) particles and substructure surface must have same polarity of zeta potential in the cleaning solution to exhibit repulsive electric coulomb force with each other.(b) adhered particles must be lifted off from substrate surface by slight etching to make electric repulsive force greater than van der Waals force,(2) Redox potential of the cleaning solution must be larger than a critical value to enable removal of electrons from adhered metals in order to dissolve them into the cleaning solution as positive ions and to decompose adhered organic molecules to CO2, H2O etc.Megasonic irradiation is very essential in UCT cleaning, particularly to remove particles by lifting them off from substrate surface. In this study, chemical reaction in the cleaning solution induced by megasonic irradiation is mainly discussed. Irradiation of ultrasonic having frequencies higher than a few hundred KHz (Megasonic) to ultrapure water has been confirmed to be able to decompose H2O molecules to H radicals and OH radicals. Decomposition efficiency of H20 molecules is strongly dependent on remaining gas components and their volume in the ultrapure water. When the remaining gas volume is decreased to less than 0.2 ∼0.3ppm, H2O molecules decomposition to H radicals and OH radicals has not been observed. Generated OH radicals have been confirmed to produce H2O2, and NH4+, NO2−, NO3− ions by reacting. with remaining N2 gas. Thus the cleaning capability of the cleaning solutions can be controlled by irradiating megasonic.

scholarly journals Investigation of Chemical Cleaning of Supercritical Superheater Oxide Scale

2018 ◽  
Vol 238 ◽  
pp. 02011
Author(s):  
Hongfeng Li ◽  
Qingtang Xue ◽  
Xinhui Nie ◽  
Yunfei Xu
Keyword(s):  
Oxide Film ◽  
Acid Corrosion ◽  
Thermal Power ◽  
Cleaning Process ◽  
Chemical Cleaning ◽  
Superheater Tube ◽  
Weight Loss Method ◽  
Loss Method ◽  
Cleaning Technology ◽  
Metal And Alloys

Recent years, as the development of thermal power plant, superheater oxide film caused by over temperature and tube explosion and the turbine blade erosion problem more and more serious. The research and development of chemical cleaning technology of superheater oxide film is one of the most effective ways to solve this problem. The chemical cleaning of superheater is rather difficult than that of boiler, for mainly the reason as below. First, the scale of superheater tube, differences in microstructure, scales dense and need to use higher cleaning medium concentration and longer cleaning time. Second, the materials of superheater complex, involves ferritic steel and austenitic stainless steel such as 12Cr1MoV, T22, T91, TP347 and SUS304. For controlling chemical cleaning process, the acid corrosion sample is employed to slow inhibitor on different metal and alloys. Also, the traditional weight-loss method to evaluate the corrosion rate of materials in chemical cleaning process is discussed to monitor the corrosion process.

Research on the Cleaning Technology of Sapphire Substrates Precision Process for LED

2012 ◽  
Vol 452-453 ◽  
pp. 1415-1419
Author(s):  
Hai Zhou ◽  
Li Gang Bei ◽  
Yue Zang ◽  
Xiao Ming Xu ◽  
Zi Guo Zuo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
International Production ◽  
Cleaning Solution ◽  
Metal Organic ◽  
Cleaning Technology ◽  
Organic Chemical Vapor Deposition

The signification of the cleaning of sapphire substrates in precision processing has been presented. The cleaning principles of sapphire substrates have been discussed. The cleaning solution and technology of the sapphire substrates for international production have been presented by cleaning experiments. The size of dust is smaller than 0.13 . The sum of dusts is less than 5 for every substrate. Sapphire substrates can be used in metal organic chemical vapor deposition of GaN without re-cleaning by this method.

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