Minority carrier collection in CuGaSe2 solar cells

2004 ◽  
Vol 451-452 ◽  
pp. 430-433 ◽  
Author(s):  
Robert Kniese ◽  
Marco Lammer ◽  
Uwe Rau ◽  
Michael Powalla
Solar RRL ◽  
2017 ◽  
Vol 1 (9) ◽  
pp. 1700100 ◽  
Author(s):  
Tim Frijnts ◽  
Natalie Preissler ◽  
Stefan Gall ◽  
Sebastian Neubert ◽  
Bernd Rech ◽  
...  

2000 ◽  
Vol 47 (4) ◽  
pp. 711-717 ◽  
Author(s):  
E. Van Kerschaver ◽  
C. Zechner ◽  
J. Dicker

Solar Energy ◽  
2016 ◽  
Vol 135 ◽  
pp. 163-168 ◽  
Author(s):  
Harvey Guthrey ◽  
Steve Johnston ◽  
Dirk N. Weiss ◽  
Sachit Grover ◽  
Kim Jones ◽  
...  

2021 ◽  
Vol 223 ◽  
pp. 110948
Author(s):  
Alban Lafuente-Sampietro ◽  
Katsuhisa Yoshida ◽  
Shenghao Wang ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
...  

2021 ◽  
Vol 13 (3) ◽  
pp. 3969-3978
Author(s):  
Yun Xiao ◽  
Haibin Wang ◽  
Fumiyasu Awai ◽  
Naoyuki Shibayama ◽  
Takaya Kubo ◽  
...  

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.


1981 ◽  
Vol 39 (4) ◽  
pp. 325-327 ◽  
Author(s):  
Min‐Koo Han ◽  
Wayne A. Anderson ◽  
R. Lahri ◽  
John Coleman

2017 ◽  
Vol 28 (17) ◽  
pp. 13084-13093
Author(s):  
Shirong Guo ◽  
Yuji Horie ◽  
Shinji Imada ◽  
Muhammad Zobayer Bin Mukhlish ◽  
Teruaki Nomiyama

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