Correlation of compositional and structural changes during pulsed laser deposition of tantalum oxide films

2004 ◽  
Vol 453-454 ◽  
pp. 245-250 ◽  
Author(s):  
Zs Geretovszky ◽  
T Szörényi ◽  
J.-P Stoquert ◽  
I.W Boyd
2009 ◽  
Vol 478 (1-2) ◽  
pp. 453-457 ◽  
Author(s):  
Xiliang He ◽  
Jiehua Wu ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Xiaoyan Gan ◽  
...  

2008 ◽  
Vol 147 (3-4) ◽  
pp. 90-93 ◽  
Author(s):  
Xiliang He ◽  
Jiehua Wu ◽  
Lili Zhao ◽  
Jia Meng ◽  
Xiangdong Gao ◽  
...  

1999 ◽  
Vol 120-121 ◽  
pp. 757-764 ◽  
Author(s):  
S. Boughaba ◽  
M.U. Islam ◽  
G.I. Sproule ◽  
M.J. Graham

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam ◽  
G. I. Sproule ◽  
M. J. Graham

ABSTRACTA large-area pulsed laser deposition (PLD) technique was used to uniformly grow tantalum pentoxide (Ta2O5) films on silicon wafers of 75 mm diameter. A KrF excimer laser beam was focused onto a 90 mm diameter Ta2O5 target to induce its ablation in oxygen gas ambient. The large-area coverage was obtained by rastering the laser beam over the radius of the rotating target, while the substrate was rotated simultaneously.The tantalum oxide films were characterized in terms of uniformity of thickness, composition, structure, and optical properties across the substrate. Average deviations typically below 1% were achieved in thickness, composition, indices of refraction and optical energy band-gap. Identical X-ray diffraction spectra were obtained at the center, middle of radius and edge of the wafers.


1996 ◽  
Vol 281-282 ◽  
pp. 453-456 ◽  
Author(s):  
M. Tanaka ◽  
M. Mukai ◽  
Y. Fujimori ◽  
M. Kondoh ◽  
Y. Tasaka ◽  
...  

2008 ◽  
Vol 51 (5) ◽  
pp. 323-325 ◽  
Author(s):  
Masataka NAKAMURA ◽  
Kimihiro IKUTA ◽  
Takanori AOKI ◽  
Akio SUZUKI ◽  
Tatsuhiko MATSUSHITA ◽  
...  

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