Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy
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2006 ◽
Vol 127
(1)
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pp. 91-97
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2002 ◽
Vol 389-393
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pp. 1473-1476
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2004 ◽
Vol 43
(2)
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pp. 534-535
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2010 ◽
Vol 49
(10)
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pp. 101001
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2004 ◽
Vol 267
(1-2)
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pp. 140-144
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2011 ◽
Vol 23
(12)
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pp. 774-776
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