A study of the optical and electronic properties of poly (vinylidene fluoride–trifluoroethylene) copolymer thin films

2006 ◽  
Vol 513 (1-2) ◽  
pp. 283-288 ◽  
Author(s):  
Y.X. Li ◽  
L. Yan ◽  
R.P. Shrestha ◽  
D. Yang ◽  
Z. Ounaies ◽  
...  
2009 ◽  
Vol 79-82 ◽  
pp. 919-922 ◽  
Author(s):  
Yu Xiang Li ◽  
Yan Wang ◽  
Qing Pu Wang ◽  
Chun Lei Ma

Thin films of vinylidene fluoride with trifluoroethylene [P(VDF-TrFE)] copolymer have been deposited onto bare Si and SiO2 by spin casting from methylethylketone solutions. The structures and optical and electronic properties for P(VDF-TrFE) films after vacuum and forming gas annealing were studied. The degree of structural order and the crystallinity determined by X-ray diffraction were increased with the thermal annealing time. Ellipsometry spectroscopy were employed to investigate the changes in the thickness, refractive indices n, and the anisotropic properties. The results reflected that the n was increased with the thermal annealing time and temperature, and the anisotropy of the annealed films was strengthened with the annealing time and temperature. Metal-polymer-(oxide)-semiconductor capacitors were used to measure the static dielectric constant K and interfacial electronic properties of P(VDF-TrFE) on Si which the K increase with film thickness and thermal annealing. The interface at Al-P(VDF-TrFE) and/or P(VDF-TrFE)-Si affect the K value which is sensitive for films thinner than 120 nm. The Si-P(VDF-TrFE) interface quality determined using capacitance-voltage and current-voltage measurementswas found to be improved after forming gas annealed.


2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.


Langmuir ◽  
1998 ◽  
Vol 14 (19) ◽  
pp. 5425-5429 ◽  
Author(s):  
Mathias Brust ◽  
Donald Bethell ◽  
Christopher J. Kiely ◽  
David J. Schiffrin

2010 ◽  
Vol 519 (4) ◽  
pp. 1441-1444 ◽  
Author(s):  
Sharon Roslyn Oh ◽  
Kui Yao ◽  
Choi Lan Chow ◽  
Francis Eng Hock Tay

2020 ◽  
Vol 109 ◽  
pp. 110257 ◽  
Author(s):  
Ammar Qasem ◽  
M.Y. Hassaan ◽  
M.G. Moustafa ◽  
Mohamed A.S. Hammam ◽  
H.Y. Zahran ◽  
...  

2020 ◽  
Vol 52 (12) ◽  
pp. 1150-1155
Author(s):  
Sabine Apelt ◽  
Susanne Höhne ◽  
Petra Uhlmann ◽  
Ute Bergmann

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