Effect of the radio-frequency power on the dielectric properties of hydrogen-containing boron carbon nitride films deposited by plasma-assisted chemical vapor deposition using tris(dimethylamino)boron gas

2010 ◽  
Vol 518 (8) ◽  
pp. 2102-2104 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Takuro Masuzumi ◽  
Makoto Hara ◽  
Daisuke Watanabe ◽  
Chiharu Kimura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Radio Frequency Power ◽  
Boron Carbon Nitride ◽  
Frequency Power ◽  
Boron Carbon

Radio Frequency Power Dependence in Formation of SiO:CH Thin Films by Plasma-Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 46 (11) ◽  
pp. 7460-7464
Author(s):  
Yongsup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Naoki Nanba ◽  
Yasushi Inoue ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Power ◽  
Power Dependence ◽  
Frequency Power

scholarly journals Chemical Vapor Deposition of Highly Conjugated, Transparent Boron Carbon Nitride Thin Films

2021 ◽  
pp. 2101602
Author(s):  
Paolo Giusto ◽  
Daniel Cruz ◽  
Tobias Heil ◽  
Nadezda Tarakina ◽  
Maddalena Patrini ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Boron Carbon Nitride ◽  
Boron Carbon
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