Effect of nickel incorporation on structural, nanomechanical and biocompatible properties of amorphous hydrogenated carbon thin films prepared by low energy biased target ion beam deposition

2010 ◽  
Vol 519 (5) ◽  
pp. 1623-1628 ◽  
Author(s):  
P. VijaiBharathy ◽  
Yin-Yu Chang ◽  
D. Nataraj ◽  
Q. Yang ◽  
Sheng-Min Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Carbon Thin Films ◽  
Nickel Incorporation ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Synthesis of cobalt/diamond-like carbon thin films by biased target ion beam deposition

2011 ◽  
Vol 20 (4) ◽  
pp. 538-541 ◽  
Author(s):  
Y. Tang ◽  
Y.S. Li ◽  
C.Z. Zhang ◽  
J. Wang ◽  
Q. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Carbon Thin Films ◽  
Beam Deposition

Evaluation of thin films fabricated by low energy direct ion beam deposition for soft X-rays

1991 ◽  
Vol 59-60 ◽  
pp. 321-325 ◽  
Author(s):  
Ito Kazuhiko ◽  
Yonemitsu Toshihiro ◽  
Etoh Kazuyuki ◽  
Sekiguchi Hisao ◽  
Yamada Ichiro ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
X Rays ◽  
Ion Beam Deposition ◽  
Beam Deposition

Heteroepitaxy of GaAs on Si and Ge by low-Energy ion Beam Deposition Using Alternating Beams

1988 ◽  
Vol 144 ◽  
Author(s):  
T. E. Haynes ◽  
R. A. Zuhr ◽  
S. J. Pennycook
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Channeling ◽  
Ion Beam Deposition ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Gaas Films ◽  
Crystal Gaas ◽  
Beam Deposition

ABSTRACTIn this paper, we demonstrate the growth of heteroepitaxial thin films of GaAs at low temperatures on Si(100) and Ge(100) substrates by direct deposition from controlled, low-energy (30-50 eV), mass-separated beams of 69Ga+ and 75As+ ions. This represents the first use of two fully ionized beams for the growth of compound semiconductor thin films. Mixing of the constituents was accomplished by periodically switching tile analyzing magnet to alternate between deposition of Ga and As at approximately monolayer intervals. Ion channeling and transmission electron microscopy show that GaAs films grown on Ge substrates at 400°C are free of the microtwins and stacking fault defects which emanate from the interface of GaAs similarly grown on Si. Single-crystal GaAs films with ion channeling minimum yields of around 6% have been grown on Ge(100) substrates at temperatures from 520°C down to as low as 320°C.

Stress generation mechanisms in carbon thin films grown by ion-beam deposition

2003 ◽  
Vol 51 (17) ◽  
pp. 5211-5222 ◽  
Author(s):  
Sulin Zhang ◽  
Harley T. Johnson ◽  
Gregory J. Wagner ◽  
Wing Kam Liu ◽  
K.Jimmy Hsia
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Stress Generation ◽  
Ion Beam Deposition ◽  
Carbon Thin Films ◽  
Generation Mechanisms ◽  
Beam Deposition
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