Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Growth of Ge1−xCx, Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 439 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1−x, Cx, alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1−xCx solid solutions were formed up to x= 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1−xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ˜28% for Ei = 100 eV and ˜18% for Ei. = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Evaluation of thin films fabricated by low energy direct ion beam deposition for soft X-rays

1991 ◽  
Vol 59-60 ◽  
pp. 321-325 ◽  
Author(s):  
Ito Kazuhiko ◽  
Yonemitsu Toshihiro ◽  
Etoh Kazuyuki ◽  
Sekiguchi Hisao ◽  
Yamada Ichiro ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
X Rays ◽  
Ion Beam Deposition ◽  
Beam Deposition

Heteroepitaxy of GaAs on Si and Ge by low-Energy ion Beam Deposition Using Alternating Beams

1988 ◽  
Vol 144 ◽  
Author(s):  
T. E. Haynes ◽  
R. A. Zuhr ◽  
S. J. Pennycook
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Channeling ◽  
Ion Beam Deposition ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Gaas Films ◽  
Crystal Gaas ◽  
Beam Deposition

ABSTRACTIn this paper, we demonstrate the growth of heteroepitaxial thin films of GaAs at low temperatures on Si(100) and Ge(100) substrates by direct deposition from controlled, low-energy (30-50 eV), mass-separated beams of 69Ga+ and 75As+ ions. This represents the first use of two fully ionized beams for the growth of compound semiconductor thin films. Mixing of the constituents was accomplished by periodically switching tile analyzing magnet to alternate between deposition of Ga and As at approximately monolayer intervals. Ion channeling and transmission electron microscopy show that GaAs films grown on Ge substrates at 400°C are free of the microtwins and stacking fault defects which emanate from the interface of GaAs similarly grown on Si. Single-crystal GaAs films with ion channeling minimum yields of around 6% have been grown on Ge(100) substrates at temperatures from 520°C down to as low as 320°C.

Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording

2014 ◽  
Vol 1633 ◽  
pp. 87-92 ◽  
Author(s):  
M. Martyniuk ◽  
D. Baldwin ◽  
R. Jeffery ◽  
K.K.M.B.D. Silva ◽  
R.C. Woodward ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Oxide ◽  
Ion Beam ◽  
Blue Laser ◽  
Oxide Thin Film ◽  
Deposition Method ◽  
Oxide Thin Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTWe report on the preparation and characterization of crystalline bismuth oxide thin films via Biased Target Ion Beam Deposition method. A focused blue laser (405nm) is used to write an array of dots in the bismuth oxide thin film and demonstrate clear and circular recording marks in form of “bubbles” or “little volcanos” (FWHM ∼500nm). Results indicate excellent static recording characteristics, writing sensitivity and contrast. The recording mechanism is investigated and is believed to be related to laser-induced morphology change.

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