The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

Praseodymium based dielectric thin films have been deposited by Metal-Organic Chemical Vapour Deposition (MOCVD). Special emphasis has been placed upon deposition parameters crucial to obtain Pr2O3 phase and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium containing films. The breakdown (BD) characteristics of Pr2O3 films have been investigated by an innovative and handling approach based on C-AFM. Moreover, the BD kinetics have been elucidated considering the role of defects in the conduction mechanisms.

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Understanding metal organic chemical vapour deposition of monolayer WS2: the enhancing role of Au substrate for simple organosulfur precursors

Nanoscale ◽

10.1039/d0nr06459a ◽

2020 ◽

Vol 12 (43) ◽

pp. 22234-22244

Author(s):

Ye Fan ◽

Kenichi Nakanishi ◽

Vlad P. Veigang-Radulescu ◽

Ryo Mizuta ◽

J. Callum Stewart ◽

...

Keyword(s):

Crystal Growth ◽

Chemical Reactions ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Metal Organic ◽

Ws2 Monolayer

A deconstructed MOCVD model process allows in-operando fingerprinting of the chemical reactions that underpin WS2 monolayer crystal growth, and highlights the enhancing role of Au support in conjunction with simple organosulfide precursors.

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Hollow core dislocations in Mg-doped AlGaN

MRS Proceedings ◽

10.1557/proc-743-l10.9 ◽

2002 ◽

Vol 743 ◽

Author(s):

D. Cherns ◽

Y. Q. Wang ◽

R. Liu ◽

F. A. Ponce ◽

H. Amano ◽

...

Keyword(s):

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Threading Dislocations ◽

Hollow Core ◽

The Core ◽

Transmission Electron ◽

Metal Organic ◽

Mg Doped

ABSTRACTTransmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (1020 cm−3) Al0.03Ga0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1–5nm. The mechanism of hollow core formation and the role of Mg are discussed.

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Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

Thin Solid Films ◽

10.1016/j.tsf.2014.02.043 ◽

2014 ◽

Vol 558 ◽

pp. 374-377 ◽

Cited By ~ 8

Author(s):

G. Kartopu ◽

V. Barrioz ◽

S.J.C. Irvine ◽

A.J. Clayton ◽

S. Monir ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Chemical Vapour Deposition ◽

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Cdte Solar Cells ◽

Metal Organic

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The role of CH4 in metal organic chemical vapour deposition of GaAs

Thin Solid Films ◽

10.1016/0040-6090(86)90287-7 ◽

1986 ◽

Vol 136 (2) ◽

pp. 281-287 ◽

Cited By ~ 17

Author(s):

G. Arens ◽

H. Lüth ◽

M. Heyen ◽

P. Balk

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Metal Organic

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Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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Semiconductors

10.1093/oso/9780198829942.003.0008 ◽

2018 ◽

Author(s):

L. Solymar ◽

D. Walsh ◽

R. R. A. Syms

Keyword(s):

Crystal Growth ◽

Molecular Beam ◽

Vapour Deposition ◽

Energy Levels ◽

Chemical Vapour ◽

Optical Excitation ◽

Organic Chemical ◽

Metal Organic ◽

Mathematical Relations ◽

Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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