Hollow core dislocations in Mg-doped AlGaN

2002 ◽  
Vol 743 ◽  
Author(s):  
D. Cherns ◽  
Y. Q. Wang ◽  
R. Liu ◽  
F. A. Ponce ◽  
H. Amano ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Hollow Core ◽  
The Core ◽  
Transmission Electron ◽  
Metal Organic ◽  
Mg Doped

ABSTRACTTransmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (1020 cm−3) Al0.03Ga0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1–5nm. The mechanism of hollow core formation and the role of Mg are discussed.

Orders of Magnitude Reduction in Threading Dislocations in ZnO Grown on Facet-Controlled GaN

2006 ◽  
Vol 957 ◽  
Author(s):  
Soo Jin Chua ◽  
Hai Long Zhou ◽  
Hui PAN ◽  
Thomas Osipowicz
Keyword(s):  
Cross Section ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Zno Film ◽  
Metal Organic ◽  
Sio2 Mask ◽  
Gan Film

ABSTRACTZnO is grown by chemical vapour deposition on {1 1 -2 2} GaN planes formed by epitaxial layer overgrowth. Window stripes in a SiO2 mask are oriented in the <1 -1 0 0> direction of the GaN film. Triangular GaN ridge are formed during ELO growth by metal organic chemical vapour deposition. A flat (0 0 0 1) ZnO plane is grown on each triangular cross-section ridge and it is found that the ZnO film has dislocation density reduced by two orders of magnitude compared to that of the GaN substrate.

scholarly journals High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zhiming Li ◽  
Jinping Li ◽  
Haiying Jiang ◽  
Yanbin Han ◽  
Yingjie Xia ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Doping Profile ◽  
Morphological Properties ◽  
Organic Chemical ◽  
Superlattice Structure ◽  
Metal Organic ◽  
P Type ◽  
Mg Doped

The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

2006 ◽  
Vol 46 ◽  
pp. 21-26
Author(s):  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Salvatore Lombardo ◽  
Roberta G. Toro ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Dielectric Breakdown ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Dielectric Thin Films ◽  
Conduction Mechanisms ◽  
Deposition Parameters ◽  
High K ◽  
Metal Organic

Praseodymium based dielectric thin films have been deposited by Metal-Organic Chemical Vapour Deposition (MOCVD). Special emphasis has been placed upon deposition parameters crucial to obtain Pr2O3 phase and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium containing films. The breakdown (BD) characteristics of Pr2O3 films have been investigated by an innovative and handling approach based on C-AFM. Moreover, the BD kinetics have been elucidated considering the role of defects in the conduction mechanisms.

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

2003 ◽  
Vol 20 (3) ◽  
pp. 398-400 ◽  
Author(s):  
Lu Min ◽  
Chang Xin ◽  
Li Zi-Lan ◽  
Yang Zhi-Jian ◽  
Zhang Guo-Yi ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Etch Pits ◽  
Metal Organic

scholarly journals Understanding metal organic chemical vapour deposition of monolayer WS2: the enhancing role of Au substrate for simple organosulfur precursors

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22234-22244
Author(s):  
Ye Fan ◽  
Kenichi Nakanishi ◽  
Vlad P. Veigang-Radulescu ◽  
Ryo Mizuta ◽  
J. Callum Stewart ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Chemical Reactions ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Ws2 Monolayer

A deconstructed MOCVD model process allows in-operando fingerprinting of the chemical reactions that underpin WS2 monolayer crystal growth, and highlights the enhancing role of Au support in conjunction with simple organosulfide precursors.

The role of CH4 in metal organic chemical vapour deposition of GaAs

1986 ◽  
Vol 136 (2) ◽  
pp. 281-287 ◽  
Author(s):  
G. Arens ◽  
H. Lüth ◽  
M. Heyen ◽  
P. Balk
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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