Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy
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1991 ◽
Vol 9
(4)
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pp. 2238
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2019 ◽
Vol 90
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pp. 59-64
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2010 ◽
Vol 150
(41-42)
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pp. 1991-1994
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