High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers

2012 ◽  
Vol 520 (15) ◽  
pp. 5042-5045 ◽  
Author(s):  
Ping-Kuan Chang ◽  
Po-Tsung Hsieh ◽  
Fu-Ji Tsai ◽  
Chun-Hsiung Lu ◽  
Chih-Hung Yeh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Absorption Coefficient ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
High Absorption Coefficient ◽  
High Absorption

High absorption-coefficient and stable a-Si for high-efficiency solar cells

2002 ◽  
Author(s):  
S. Nakano ◽  
S. Okamoto ◽  
T. Takahama ◽  
M. Nishikuni ◽  
K. Ninomiya ◽  
...  
Keyword(s):  
Solar Cells ◽  
Absorption Coefficient ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
High Absorption Coefficient ◽  
High Absorption

High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition

1991 ◽  
Vol 30 (Part 1, No. 8) ◽  
pp. 1635-1640 ◽  
Author(s):  
Katsuhiko Higuchi ◽  
Katsuya Tabuchi ◽  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Photochemical Vapor Deposition

scholarly journals Studies on optical characteristics of CuInSe2 thin films

2013 ◽  
Vol 3 (2) ◽  
Author(s):  
Mohammad Bhuiyan ◽  
Abdus Bhuiyan ◽  
Ahmad Hossain ◽  
Zahid Mahmood
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
High Efficiency ◽  
Stoichiometric Composition ◽  
Film Material ◽  
High Efficiency Solar Cells ◽  
Evaporation Technique ◽  
High Absorption Coefficient ◽  
High Absorption

AbstractCuInSe2 is considered as a striking semiconductor for second generation solar cells. An investigation of optical properties of CuInSe2 thin films is essential to evaluate its perfectibility as high efficiency solar cells. The films were fabricated by thermal co-evaporation technique. For this experiment, a shimadzu spectrophotometer of model number 1201 is used. The optical properties of these films are determined for the wavelength range 350 nm–1100 nm. From the experiment it is evident that the reflectance and transmittance of the films are negligible in comparison to the absorption of these films. The high absorption coefficient of the order of 104/cm of the film material also supports this. The band gap of the CuInSe2 films was evaluated to be 1.1 eV. From XRD and EDAX analysis it is evident that CuInSe2 films are polycrystalline in nature having ideal stoichiometric composition.

Tunnel oxide passivating electron contacts for high‐efficiency n‐type silicon solar cells with amorphous silicon passivating hole contacts

2019 ◽  
Vol 27 (12) ◽  
pp. 1104-1114 ◽  
Author(s):  
HyunJung Park ◽  
Youngseok Lee ◽  
Se Jin Park ◽  
Soohyun Bae ◽  
Sangho Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Type Silicon

On “p layers” for high efficiency amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 227-238 ◽  
Author(s):  
Hisaki Tarui ◽  
Yasuo Kishi ◽  
Noboru Nakamura ◽  
Masato Nishikuni ◽  
Makoto Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells

Low cost high-efficiency amorphous silicon solar cells with improved light-soaking stability

2012 ◽  
Vol 98 ◽  
pp. 277-282 ◽  
Author(s):  
Jung Y. Huang ◽  
Chien Y. Lin ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
Bau-Tong Dai
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Low Cost ◽  
Silicon Solar Cells

High Efficiency Thin Film Silicon Solar Cells

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Triple Junction ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Cell Efficiency ◽  
High Efficiency Solar Cells ◽  
Alternative Material ◽  
Staebler Wronski Effect

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.

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