scholarly journals Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

2014 ◽  
Vol 571 ◽  
pp. 756-761 ◽  
Author(s):  
Daisuke Murata ◽  
Tetsuya Yuguchi ◽  
Hiroyuki Fujiwara
Keyword(s):  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Tandem Solar Cell ◽  
Cell Structures

Characterization of InGaAsN solar-cell structures on Ge substrates

2014 ◽  
Vol 11 (3-4) ◽  
pp. 561-564 ◽  
Author(s):  
K. Uesugi ◽  
S. Kuboya ◽  
S. Sanorpim ◽  
K. Onabe
Keyword(s):  
Solar Cell ◽  
Cell Structures

scholarly journals Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

2016 ◽  
Vol 34 (4) ◽  
pp. 845-850 ◽  
Author(s):  
Adam Szyszka ◽  
Michał Obłąk ◽  
Tomasz Szymański ◽  
Mateusz Wośko ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Tandem Solar Cell ◽  
Quantitative Characterization ◽  
High Electron Mobility ◽  
Scanning Capacitance Microscopy ◽  
Transistor Fabrication ◽  
Microscopy Characterization

AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures

1998 ◽  
Vol 313-314 ◽  
pp. 469-473 ◽  
Author(s):  
Joohyun Koh ◽  
H. Fujiwara ◽  
Yiwei Lu ◽  
C.R. Wronski ◽  
R.W. Collins
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Cell Structures ◽  
Silicon Based

II–VI compounds as the top absorbers in tandem solar cell structures

2005 ◽  
Vol 116 (3) ◽  
pp. 283-291 ◽  
Author(s):  
P. Mahawela ◽  
G. Sivaraman ◽  
S. Jeedigunta ◽  
J. Gaduputi ◽  
M. Ramalingam ◽  
...  
Keyword(s):  
Solar Cell ◽  
Tandem Solar Cell ◽  
Cell Structures

Kinetics of Light-Induced Changes in P-I-N Cells with Protocrystalline Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
R.J. Koval ◽  
J. Koh ◽  
Z. Lu ◽  
Y. Lee ◽  
L. Jiao ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Flow Ratio ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Evolutionary Phase ◽  
Induced Changes ◽  
Kinetics Of ◽  
Different Thickness

AbstractStudies have been carried out on the thickness dependent transition between the amorphous and microcrystalline phases in intrinsic Si:H materials (i-layers) and its effect on p-i-n solar cell performance [1]. P(a-SiC:H)-i(a-Si:H)-n(μcSi:H) cell structures were deposited with the intrinsic Si:H layer thickness and the flow ratio of hydrogen to silane, R=[H2]/[SiH4], guided by an evolutionary phase diagram obtained from real-time spectroscopic ellipsometry. The thickness range over which the fill factors are controlled by the bulk was established and their characteristics investigated with different protocrystalline i-layer materials (i.e., materials prepared near the amorphous to microcrystalline boundary but on the amorphous side). Insights into the properties of these materials and the effects of the transition to the microcrystalline phase were obtained from the systematic changes in the initial fill factors, their light-induced changes, and their degraded steady states for cells with i-layers of different thickness and H2 dilution.

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