scholarly journals Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

2016 ◽  
Vol 34 (4) ◽  
pp. 845-850 ◽  
Author(s):  
Adam Szyszka ◽  
Michał Obłąk ◽  
Tomasz Szymański ◽  
Mateusz Wośko ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Tandem Solar Cell ◽  
Quantitative Characterization ◽  
High Electron Mobility ◽  
Scanning Capacitance Microscopy ◽  
Transistor Fabrication ◽  
Microscopy Characterization

AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility
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