Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

2014 ◽  
Vol 562 ◽  
pp. 181-184 ◽  
Author(s):  
Zhuang-hao Zheng ◽  
Ping Fan ◽  
Jing-ting Luo ◽  
Xing-min Cai ◽  
Guang-xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Bismuth Antimony ◽  
Beam Sputtering

The influence of heat treatments on the thermoelectric properties of copper selenide thin films prepared by ion beam sputtering deposition

2016 ◽  
Vol 658 ◽  
pp. 880-884 ◽  
Author(s):  
Ya-dan Li ◽  
Ping Fan ◽  
Zhuang-hao Zheng ◽  
Jing-ting Luo ◽  
Guang-xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Ion Beam ◽  
Heat Treatments ◽  
Copper Selenide ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Growth of Thin Films by UHV ION Beam Sputtering Deposition Technique

1986 ◽  
pp. 457-460 ◽  
Author(s):  
C. Pellet ◽  
C. Schwebel ◽  
F. Meyer ◽  
G. Gautherin
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Deposition Technique ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Ion-beam sputtering deposition of CsI thin films

2004 ◽  
Vol 80 (8) ◽  
pp. 1789-1791 ◽  
Author(s):  
M.A. Nitti ◽  
A. Valentini ◽  
G.S. Senesi ◽  
G. Ventruti ◽  
E. Nappi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Optimization in fabricating bismuth telluride thin films by ion beam sputtering deposition

2012 ◽  
Vol 520 (16) ◽  
pp. 5245-5248 ◽  
Author(s):  
Z.H. Zheng ◽  
P. Fan ◽  
T.B. Chen ◽  
Z.K. Cai ◽  
P.J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Telluride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Room temperature synthesis of boron nitride thin films by dual-ion beam sputtering deposition

2016 ◽  
Vol 42 (3) ◽  
pp. 4171-4175 ◽  
Author(s):  
Z.F. Wu ◽  
L. Guo ◽  
K. Cheng ◽  
F. Zhang ◽  
R.F. Guan
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Temperature Synthesis ◽  
Sputtering Deposition ◽  
Room Temperature Synthesis ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering

2011 ◽  
Vol 233-235 ◽  
pp. 2399-2402 ◽  
Author(s):  
Shen Jiang Wu ◽  
Wei Shi ◽  
Jun Hong Su ◽  
Wen Qi Wang
Keyword(s):  
Thin Films ◽  
Orthogonal Experiment ◽  
Ion Beam ◽  
Experimental Result ◽  
Zno Thin Films ◽  
Ion Beam Sputtering ◽  
Technological Parameters ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Deposition Technology

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.

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