Effects of termal treatment on the physical properties of Buchenavia sp. (branquilho) wood

This work aimed to evaluate the effect of heat treatment on the physical properties of wood from Buchenavia sp. The heat treatments were carried out at temperatures of 180 °C and 200 °C for 2 h. Apparent density (AD), basic density (BD), porosity (Ф), mass loss, longitudinal (LS), radial (RS), tangential (TS) and volumetric (VS) shrinkages and anisotropic factor (AF) were determined. The lowest values of basic density (0.67 g cm-3), apparent density (0.77 gcm-3), and porosity (43.3%) were observed for the wood treated at a temperature of 200 °C. Mass losses increased with increasing temperature and the highest values were observed under the condition of 200 °C (9.3%). The LS and AF was not affected by heat treatments. The mean values for RS (3.1%), TS (5.1%), and VS (9.1%) were reduced after the performance of heat treatments at temperatures of 180°C and 200°C, which did not differ from each other. The thermal treatments were able to reduce the dimensional instability of Buchenavia sp. Thermal treatments enhance the use of less prestigious Amazonian woods in the civil construction market.

Effects of High-Temperature Milk Processing

In this entry, high temperature is defined as 90 to 150 °C. Many dairy processes, including extended shelf-life (ESL) and ultra-high-temperature (UHT) processing, in-container sterilization, yogurt milk heat treatment, pre-heating or forewarming milk for production of sterile concentrated milk and powders, manufacture of co-precipitate and dolce de leche, involve heat treatments in this temperature range. Pasteurization is not included in this entry as it is generally performed at 72–75 °C.

Structure of Alloys for (Sm,Zr)(Co,Cu,Fe)z Permanent Magnets: III. Matrix and Phases of the High-Coercivity State

Observations of the surface domain structure (Kerr-effect), optical metallography, scanning electron microscopy (SEM-SE), and electron microprobe analysis (EPMA-SEM), measurements of major and minor magnetic hysteretic loops were used to study pseudo-single-crystal samples of (Sm,Zr)(Co,Cu,Fe)z alloys subjected to heat treatments to the high-coercivity state, which are used in fabricating sintered permanent magnets. Correlations between the chemical composition, hysteretic properties, structural components, domain structure, and phase state were determined for the concentration ranges that ensure wide variations of 4f-/4d-/3d-element ratio in the studied samples. The phase state formed by collinear and coherent phase components determines the high coercive force and ultimate magnetic hysteresis loops of the pseudo-single crystals. It was found that the 1:5 phase with the hexagonal structure (P6/mmm) is the matrix of the alloys for (Sm,Zr)(Co,Cu,Fe)z permanent magnets; the matrix undergoes phase transformations in the course of all heat treatments for the high-coercivity state. The heterogeneity observed with optical magnifications, namely, the observation of main structural components A and B, is due to the alternation, within the common matrix, of regions with modulated quasi-spherical precipitates and regions with hexagonal bipyramids (cellular phase) although, traditionally, many investigators consider the cellular phase as the matrix. It is shown that the relationship of volume fractions of structural components A and B that account for more than 0.9 volume fraction of the total, which is due to the integral chemical composition of the alloys, determines the main hysteretic performances of the samples. The Zr-rich phases, such as 5:19, 2:7, and 6:23, and a structural component with the variable stoichiometry (Sm(Co,Cu,Fe)3.5–5) that is almost free of Zr and contains up to 33 at% Cu, were found only within structural component A in quantities sufficient for EPMA analysis.

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

We investigated the electrical performance and positive bias stress (PBS) stability of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with SiOx passivation layers after the post-annealing treatments in different atmospheres (air, N2, O2 and vacuum). Both the chamber atmospheres and the device passivation layers proved important for the post-annealing effects on a-IGZO TFTs. For the heat treatments in O2 or air, the larger threshold voltage (VTH) and off current (IOFF), smaller field-effect mobility (μFE), and slightly better PBS stability of a-IGZO TFTs were obtained. The X-ray photoemission spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) measurement results indicated that the oxygen atoms from the ambience led to less oxygen vacancies (VO) and more oxygen-related defects in a-IGZO after the heat treatments in O2 or air. For the annealing processes in vacuum or N2, the electrical performance of the a-IGZO TFTs showed nearly no change, but their PBS stability evidently improved. After 4500 seconds’ stressing at 40 V, the VTH shift decreased to nearly 1 V. In this situation, the SiOx passivation layers were assumed to effectively prevent the oxygen diffusion, keep the VO concentration unchanged and refuse the oxygen-related defects into the a-IGZO films.