Determination of the thickness of polycrystalline thin films by using X-ray methods

2015 ◽  
Vol 591 ◽  
pp. 215-218 ◽  
Author(s):  
S. Daniš ◽  
Z. Matĕj ◽  
L. Matĕjová ◽  
M. Krupka
2013 ◽  
Vol 544 ◽  
pp. 201-205 ◽  
Author(s):  
Wei-En Fu ◽  
Yong-Qing Chang ◽  
Bo-Ching He ◽  
Chung-Lin Wu

Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


Author(s):  
D J H Cockayne ◽  
D R McKenzie

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.


2012 ◽  
Vol 524 ◽  
pp. 22-25 ◽  
Author(s):  
Hiroshi Nozaki ◽  
Tatsuo Fukano ◽  
Shingo Ohta ◽  
Yoshiki Seno ◽  
Hironori Katagiri ◽  
...  

2013 ◽  
Vol 35 (12) ◽  
pp. 2440-2443 ◽  
Author(s):  
Y.A. Paredes ◽  
E.G. Gravina ◽  
M.D. Barbosa ◽  
R. Machado ◽  
W.G. Quirino ◽  
...  

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