Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

2015 ◽  
Vol 594 ◽  
pp. 30-34 ◽  
Author(s):  
Yunus Akaltun
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Layer Adsorption ◽  
Ionic Layer

scholarly journals Effect of SILAR Cycles on the Thickness, Structural, Optical Properties of Cobalt Selenide Thin Films

2021 ◽  
pp. 1-9
Author(s):  
Egwunyenga N.J ◽  
Onuabuchi V.C ◽  
Okoli N.L ◽  
Nwankwo I.E
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Orthorhombic Phase ◽  
Deposition Technique ◽  
Energy Band Gap ◽  
Optical Absorbance ◽  
Layer Adsorption ◽  
Cobalt Selenide ◽  
Deposited Films ◽  
Ionic Layer

Cobalt Selenide thin films were fabricated using Successive Ionic Layer Adsorption and Reaction (SILAR) deposition technique at different SILAR cycles. The precursors for Cobalt and Selenium ions were CoCl2.6H2O and Na2SeSO3 respectively. Optical properties and thickness of the deposited films were studied to determine the effect of number of SILAR cycles on these properties. The optical absorbance of the films was found to decrease as wavelength increases and increases as SILAR cycle increases. Transmittance of the CoSe thin films was found to increase as the wavelength increases but decreases as number of SILAR cycles increased. The extinction coefficient of CoSe thin films decreases as wavelength increases but increases as the SILAR cycles increases. The energy band gap of CoSe thin films deposited decreases from 2.47 eV to 2.20 eV as number of SILAR cycles increases and film thickness increases from 92.96 nm and 225.63 nm. Structural properties of deposited cobalt selenide thin films showed that they correspond to orthorhombic phase of CoSe2 crystal structure of cobalt selenide thin films with crystallite size ranging from 7.63 nm to 13.07 nm.

Electrical and optical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

2008 ◽  
Vol 110 (1) ◽  
pp. 180-185 ◽  
Author(s):  
A.U. Ubale ◽  
A.S. Daryapurkar ◽  
R.B. Mankar ◽  
R.R. Raut ◽  
V.S. Sangawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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