Structural phase transition and enhanced ferroelectricity in Bi(Fe1−xMnx)O3 thin films deposited by pulsed laser deposition

For growing high quality epitaxial VO2 thin films, the substrate with suitable lattice parameters is very important if considering the lattice matching. In addition, the thermal conductivity between the substrate and epitaxial film should be also considered. Interestingly, the c-plane of hexagonal 6H-SiC with high thermal conductivity has a similar lattice structure to the VO2 (010), which enables epitaxial growth of high quality VO2 films on 6H-SiC substrates. In the current study, we deposited VO2 thin films directly on 6H-SiC (0001) single-crystal substrates by pulsed laser deposition (PLD) and systematically investigated the crystal structures and surface morphologies of the films as the function of growth temperature and film thickness. With optimized conditions, the obtained epitaxial VO2 film showed pure monoclinic phase structure and excellent phase transition properties. Across the phase transition from monoclinic structure (M1) to tetragonal rutile structure (R), the VO2/6H-SiC (0001) film demonstrated a sharp resistance change up to five orders of magnitude and a narrow hysteresis width of only 3.3 °C.

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The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2005.06.005 ◽

2005 ◽

Vol 66 (10) ◽

pp. 1647-1654 ◽

Cited By ~ 9

Author(s):

I. Chaitanya Lekshmi ◽

Arup Gayen ◽

M.S. Hegde

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Pulsed Laser Deposition ◽

Structural Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Structural Phase Transformation

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Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011110 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-65-Pr11-69

Author(s):

N. Lemée ◽

H. Bouyanfif ◽

J. L. Dellis ◽

M. El Marssi ◽

M. G. Karkut ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011121 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-133-Pr11-137

Author(s):

J. R. Duclère ◽

M. Guilloux-Viry ◽

A. Perrin ◽

A. Dauscher ◽

S. Weber ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Platinum Electrodes

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Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-720-h2.4 ◽

2002 ◽

Vol 720 ◽

Author(s):

Costas G. Fountzoulas ◽

Daniel M. Potrepka ◽

Steven C. Tidrow

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Electrical Characterization ◽

Field Variable ◽

Laser Deposition ◽

X Ray Diffraction ◽

Ceramic Substrates ◽

Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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