Thermal stability of B-based multilayer mirrors for next generation lithography

2017 ◽  
Vol 642 ◽  
pp. 252-257
Author(s):  
P. Naujok ◽  
K. Murray ◽  
S. Yulin ◽  
C. Patzig ◽  
N. Kaiser ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Next Generation ◽  
Multilayer Mirrors ◽  
Next Generation Lithography ◽  
Thermal Stability Of

High performance La/B4C multilayer mirrors with barrier layers for the next generation lithography

2013 ◽  
Vol 102 (1) ◽  
pp. 011602 ◽  
Author(s):  
N. I. Chkhalo ◽  
S. Künstner ◽  
V. N. Polkovnikov ◽  
N. N. Salashchenko ◽  
F. Schäfers ◽  
...  
Keyword(s):  
High Performance ◽  
Next Generation ◽  
Multilayer Mirrors ◽  
Barrier Layers ◽  
Next Generation Lithography

SOFT X-RAY REFLECTIVITY AND THERMAL STABILITY OF CoCr/C MULTILAYER X-RAY MIRRORS

2002 ◽  
Vol 09 (01) ◽  
pp. 593-596 ◽  
Author(s):  
H. TAKENAKA ◽  
K. NAGAI ◽  
H. ITO ◽  
S. ICHIMARU ◽  
T. SAKUMA ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Critical Parameter ◽  
Incident Angle ◽  
Wavelength Region ◽  
Normal Incidence ◽  
Photoemission Spectroscopy ◽  
Multilayer Mirrors ◽  
X Ray ◽  
Thermal Stability Of

The development of highly reflective multilayer mirrors for use in the wavelength region around 6 nm is desired for X-ray photoemission spectroscopy for inner-shell excitation using a Schwarzschild objective. For this application, reflectivity is the most critical parameter determining the performance of multilayer mirrors, because the reflectivity of multilayers in the 6 nm region is generally very low. We have designed CoCr/C multilayer mirrors with a comparatively high reflectivity at around normal incidence and have fabricated them by magnetron sputtering. The measured peak reflectivity is about 16% at a wavelength of around 6 nm and an incident angle of 88°. The reflectivity remains almost constant for 4 h under 300°C in an Ar atmosphere.

Thermal Stability of Normal Incidence Multilayer Mirrors for the X-Ray Wavelength near Carbon K-Edge

1995 ◽  
Vol 5 (3) ◽  
pp. 295-306
Author(s):  
E. A. Bugaev ◽  
A. I. Fedorenko ◽  
V. V. Kondratenko ◽  
E. N. Zubarev
Keyword(s):  
Thermal Stability ◽  
Normal Incidence ◽  
Multilayer Mirrors ◽  
X Ray ◽  
Thermal Stability Of

Interface characterization in B-based multilayer mirrors for next generation lithography

2016 ◽  
Vol 612 ◽  
pp. 414-418 ◽  
Author(s):  
Philipp Naujok ◽  
Sergiy Yulin ◽  
Robert Müller ◽  
Norbert Kaiser ◽  
Andreas Tünnermann
Keyword(s):  
Next Generation ◽  
Multilayer Mirrors ◽  
Interface Characterization ◽  
Next Generation Lithography

Thermal stability of normal incidence multilayer mirrors for x-ray wavelength near carbon K-edge

1995 ◽  
Author(s):  
E. A. Bugaev ◽  
Anatoli I. Fedorenko ◽  
V. V. Kondratenko ◽  
E. N. Zubarev
Keyword(s):  
Thermal Stability ◽  
Normal Incidence ◽  
Multilayer Mirrors ◽  
X Ray ◽  
Thermal Stability Of

Thermal stability of soft x-ray Mo–Si and MoSi_2-Si multilayer mirrors

1993 ◽  
Vol 32 (10) ◽  
pp. 1811 ◽  
Author(s):  
V. V. Kondratenko ◽  
Yu. P. Pershin ◽  
O. V. Poltseva ◽  
A. I. Fedorenko ◽  
E. N. Zubarev ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Multilayer Mirrors ◽  
X Ray ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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