Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst

2019 ◽  
Vol 685 ◽  
pp. 335-342 ◽  
Author(s):  
Maisara Othman ◽  
Richard Ritikos ◽  
Saadah Abdul Rahman
Keyword(s):  
Nickel Catalyst ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Free Graphene ◽  
Hot Filament ◽  
Filament Plasma

scholarly journals Self-organized graphene-like boron nitride containing nanoflakes on copper by low-temperature N2 + H2 plasma

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87607-87615 ◽  
Author(s):  
B. B. Wang ◽  
D. Gao ◽  
I. Levchenko ◽  
K. Ostrikov ◽  
M. Keidar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Chemical Vapour Deposition ◽  
Efficient Method ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Self Organized ◽  
Reactive Gases ◽  
Hot Filament

A simple and efficient method for synthesizing complex graphene-inspired BNCO nanoflakes by plasma-enhanced hot filament chemical vapour deposition using B4C as a precursor and N2/H2 reactive gases is reported.

Synthesis of Nano-Crystalline Diamond Film in Hot Filament Chemical Vapour Deposition by Adding Ar

2001 ◽  
Vol 18 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Zhang Yu-Feng ◽  
Zhang Fan ◽  
Gao Qiao-Jun ◽  
Yu Da-Peng ◽  
Peng Xiao-Fu ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Nano Crystalline ◽  
Hot Filament

Plasma diagnosis in d.c.-biased hot-filament-assisted chemical vapour deposition by double-probe method

1993 ◽  
Vol 2 (2-4) ◽  
pp. 476-480
Author(s):  
Zhenwu Xuan ◽  
Peichun Yang ◽  
Xin Pu ◽  
Erkai Liu ◽  
Lichang Qi ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Probe Method ◽  
Double Probe ◽  
Plasma Diagnosis ◽  
Hot Filament

Nucleation of diamond particles by hot filament chemical vapour deposition

1993 ◽  
Vol 236 (1-2) ◽  
pp. 115-119 ◽  
Author(s):  
Kazunori Tamaki ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Diamond Particles ◽  
Hot Filament

Wear of HFACVD Diamond Coated Tools in Turning of MMC

Volume 3 ◽  
2004 ◽  
Author(s):  
A. Boschetto ◽  
F. Veniali
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Soft Materials ◽  
Industrial Applications ◽  
Ferrous Alloys ◽  
Coated Tools ◽  
Hot Filament ◽  
Pcd Tools

HFACVD (Hot Filament Assisted Chemical Vapour Deposition) is a typical technology which permits the coating of soft materials with hard or super hard layers which lead to ultra wear resistant tools. Typical tools obtained with this technology are based on a diamond layer. Unfortunately, these tools are not suitable for machining of ferrous alloys due to chemical issues, yet their use is very promising in the machining of composites based on aluminium matrix and reinforced with alumina or silicon carbide. In this paper HFACVD diamond coated, WC and PCD tools are used in turning of Al2O3/Al composites until they are completely worn out. The results show that the diamond tools can be competitive with both the WC and PCD ones in the industrial applications.

XRD Studies on Residual Stress of the Diamond Films Grown Using Hot Filament Chemical Vapour Deposition Technique on Silicon Nitride and Tungsten Carbide Substrates

2013 ◽  
Vol 686 ◽  
pp. 325-330 ◽  
Author(s):  
Esah Hamzah ◽  
Tze Mi Yong ◽  
Kevin Chee Mun Fai
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Tungsten Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique ◽  
Hot Filament

This study analyses residual stress measurement using X-Ray diffraction method on ultrafine-polycrystalline diamonds and polycrystalline diamonds films grown using Hot Filament Chemical Vapour Deposition technique (HFCVD) on silicon nitride(Si3N4) and tungsten carbide (WC) substrates in the same chamber at the same time with varied pretreatments prior to HFCVD diamond deposition. Measurements were taken perpendicular to the surface and the measured residual stress states of the diamond films are in compression. Thus, assuming isotropic properties of the film, the diamond films grown have tension residual stress parallel to the surface of the substrate. Residual stress is estimated to have the lowest stress for substrate that has undergone 5g/liter silicon carbide seeding process. Effects of residual stress to adhesion are discussed for both substrates.

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