Tetrahydro-dibenzo[a,d][7]annulene-5,11-dihydrazone and Magnesium oxide Used to Control the Corrosion of Aluminium in Chloride ions Environment

Chloride ions interact with aluminium in marine atmosphere to form corrosion cell. Due to this corrosion reaction occurs on their surface, aluminium is oxidized into Al3+. The corrosion reaction accelerates deterioration in metal and it produces galvanic, pitting, stress, crevice, intergranular corrosion. Chloride ions decrease internal and external strength of aluminium metal. It is a very important metal so used in different appliances for e.g. road, water, air transports, housing, railways and other fields. Nanocoating and electrospray techniques used to check the corrosion of aluminium metal. For nanocoating and electrospray materials applied tetrahydro-dibenzo[a,d][7]annulene-5,11-dihydrazone and MgO. Both materials formed composite barrier and developed a passive surface for Cl- ions. This barrier reduced the corrosion rate of aluminium. Nozzle spray and chemical vapour deposition technique used for coating process. The corrosion rate of metal was determined by gravimetric method. Corrosion potential and current density were calculated by potentiostat. The composite barrier formation was confirmed by activation energy, heat of adsorption, free energy, enthalpy and entropy. These thermal parameters were obtained by Arrhenius equation, Langmuir isotherm and Transition state equation. The adsorption of tetrahydro-dibenzo[a,d][7]annulene-5,11-dihydrazone and MgO electrospray on aluminium surface was depicted by Langmuir, Frundlich and Temkin isotherm. The results of surface coverage area and coating efficiency were noticed that both materials were mitigated the corrosion rate of aluminium in chloride ions environment.

Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study

This communication reports the synthesis of bis(diisobutyldithiophosphinato)lead(II) complex and its subsequent application as a single source precursor for the nanostructured deposition of lead sulphide semiconductors and its impedance to explore its scope in the field of electronics. Synthesized complex was characterized by microelemental analysis, nuclear magnetic resonance spectroscopy, infrared spectroscopy and thermogravimetric analysis. This complex was decomposed using the aerosol-assisted chemical vapour deposition technique at different temperatures to grow PbS nanostructures on glass substrates. These nanostructures were analyzed by XRD, SEM, TEM and EDX methods. Impedance spectroscopic measurements were performed for PbS in the frequency range of 40 to 6 MHz at room temperature. In a complex impedance plane plot, two relaxation processes were exhibited due to grains and grain boundaries contribution. A high value of dielectric constant was observed at low frequencies, which was explained on the basis of Koops phenomenological model and Maxwell–Wagner type polarization. Frequency-dependent AC conductivity results were compliant with Jonscher power law, while capacitance–voltage loop had a butterfly shape. These impedance spectroscopic results have corroborated the ferroelectric nature of the resultant PbS nanodeposition.

Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, study of evolution of the proton-induced luminescence spectra and short-circuit current has been simultaneously performed during 1.6 MeV proton irradiation. GaN and AlGaN (with various Al concentrations) epi-layers grown by metalorganic chemical vapour deposition technique and Schottky diode structures have been examined. Variations of spectral and electrical parameters could be applied for the remote dosimetry of large hadron fluences.

Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies.

Efficiently texturing hierarchical superhydrophobic fluoride-free translucent films by AACVD with excellent durability and self-cleaning ability

Robust fluoride-free translucent superhydrophobic coatings were constructed on glass surfaces via one-step aerosol-assisted chemical vapour deposition technique. There are 9 bounce cycles observed on such hierarchically structured surfaces, which exhibited excellent self-cleaning ability.