Controlled Spalling of (100)-oriented GaAs with a Nanoimprint Lithography Interlayer for Thin-Film Layer Transfer without Facet Formation

ABSTRACTHigh dose hydrogen implantation-induced blistering phenomena in GaN and AlN have been investigated for potential thin film layer transfer applications. GaN and AlN were implanted with 100 keV H2+ ions with various ion doses in the range of 5´1016 to 2.5´1017 cm−2. After implantation the samples were annealed at higher temperatures up to 800°C in order to observe the formation of surface blisters. In the case of GaN only those samples that were implanted with a dose of 1.3´1017 cm−2 or higher showed surface blistering after post-implantation annealing. For AlN the samples those were implanted with a dose of 1.0´1017 or 1.5´1017 cm−2 displayed surface blistering after post-implantation annealing. Cross-sectional transmission electron microscopy was utilized to observe the microscopic defects that eventually cause surface blistering. Large area microcracks, as revealed in the XTEM images, were clearly observed in the case of both GaN and AlN after post-implantation annealing. A comparison of the hydrogen implantation-induced blistering in GaN and AlN has also been presented.

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The main role of thermal annealing in controlling the structural and optical properties of ITO thin film layer

Optical Materials ◽

10.1016/j.optmat.2021.110866 ◽

2021 ◽

Vol 113 ◽

pp. 110866 ◽

Cited By ~ 1

Author(s):

Moustafa Ahmed ◽

Ahmed Bakry ◽

Ammar Qasem ◽

Hamed Dalir

Keyword(s):

Thin Film ◽

Optical Properties ◽

Thermal Annealing ◽

Main Role ◽

Structural And Optical Properties ◽

Thin Film Layer ◽

Film Layer

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Measurements of Residual Stress in the Layers of Thin Film Micro-Gas Sensors

MRS Proceedings ◽

10.1557/proc-657-ee5.19 ◽

2000 ◽

Vol 657 ◽

Author(s):

Youngman Kim ◽

Sung-Ho Choo

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Residual Stress ◽

Gas Sensor ◽

Gas Sensors ◽

Micro Gas Sensor ◽

Thin Film Layer ◽

Film Layer ◽

The Difference ◽

Stress States

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.

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Advances in Thin Film Layer Sensors for Temperature Measurements in Highly Loaded Tribological Contacts under Mixed Lubrication

Friction, Wear and Wear Protection ◽

10.1002/9783527628513.ch59 ◽

2011 ◽

pp. 467-472

Author(s):

A. Albers ◽

S. Beauvais ◽

J. Bsul ◽

W. Burger

Keyword(s):

Thin Film ◽

Mixed Lubrication ◽

Temperature Measurements ◽

Thin Film Layer ◽

Film Layer ◽

Highly Loaded

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Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1110.211 ◽

2015 ◽

Vol 1110 ◽

pp. 211-217

Author(s):

Jin Woo Lee ◽

Yun Hae Kim ◽

Chang Wook Park

Keyword(s):

Thin Film ◽

Thin Films ◽

Stacking Sequence ◽

Flat Panel Displays ◽

Oxide Systems ◽

Thin Film Layer ◽

Tin Oxides ◽

Impurity Doped ◽

Indium Oxides ◽

Film Layer

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

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