Structural and spectroscopic modifications of nanocrystalline zinc oxide films induced by swift heavy ions

Vacuum ◽  
2011 ◽  
Vol 86 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Sebiha Rehman ◽  
R.G. Singh ◽  
J.C. Pivin ◽  
Waseem Bari ◽  
Fouran Singh
Wear ◽  
1997 ◽  
Vol 203-204 ◽  
pp. 498-506 ◽  
Author(s):  
S.V. Prasad ◽  
J.S. Zabinski

2020 ◽  
Vol 1695 ◽  
pp. 012040
Author(s):  
R V Tominov ◽  
A A Avakyan ◽  
V I Avilov ◽  
V A Smirnov ◽  
O A Ageev

2012 ◽  
Vol 48 (5) ◽  
pp. 331-337 ◽  
Author(s):  
A. V. Kozytskiy ◽  
A. L. Stroyuk ◽  
S. Ya. Kuchmy ◽  
N. A. Skorik ◽  
V. O. Moskalyuk

1993 ◽  
Vol 97 (42) ◽  
pp. 11081-11086 ◽  
Author(s):  
Gareth Redmond ◽  
Angela O'Keeffe ◽  
Carol Burgess ◽  
Ciara MacHale ◽  
Donald Fitzmaurice

2011 ◽  
Vol 110 (8) ◽  
pp. 083520 ◽  
Author(s):  
Fouran Singh ◽  
R. G. Singh ◽  
Vinod Kumar ◽  
S. A. Khan ◽  
J. C. Pivin

Author(s):  
T. A. Emma ◽  
M. P. Singh

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.


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